2N5551 Datasheet, PDF (1/3 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

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TM
Micro Commercial Components

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20736 Marilla Street Chatsworth

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2N5551
Features
• This device is designed for general purpose high voltage amplifiers
and gas discharge display drivers.
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
x Marking:Type number
• Lead Free Finish/Rohs Compliant ("P"Suffix designates
Compliant. See ordering information)
Maximum Ratings
Symbol
V_CEO
V_CBO
VEBO
I_C
PC
T_J
TSTG
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Operating Junction Temperature
Storage Temperature
Rating
Unit
160
V
180
V
6.0
V
600
mA
625
mW
-55 to +150
O_C
-55 to +150
O_C
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
Min
Max Units
OFF CHARACTERISTICS
V _(BR)CEO
V _(BR)CBO
Collector-Emitter Voltage*
(Ic=1.0mAdc, I _B=0)
Collector-Base Voltage
(I _C=100uAdc, I_E=0)
V (BR)EBO
Emitter-Base Voltage
(I _E=10uAdc, I_C=0)
ICBO
Collector Cutoff Current
(V _CB=35Vdc,I_E=0)
(V _CB=120Vdc, I_E=0, T_A=100^OC)
I_EBO
Emitter Cutoff Current
(V _EB=5.0Vdc, I_C=0)
ON CHARACTERISTICS
160
---
Vdc
180
---
Vdc
6.0
---
Vdc
---
50
nAdc
---
50
uAdc
---
50
nAdc
h_FE
DC Current gain
(I _C=1.0mAdc, V_CE=5.0Vdc)
80
(I _C=10mAdc, V_CE=5.0Vdc)
80
(I _C=50mAdc, V_CE=5.0Vdc)
30
V_CE(sat) Collector-Emitter Saturation Voltage
---
(IC=50mAdc, IB=5.0mAdc)
V_BE(sat) Base- Emitter Voltage
---
(IB=5.0mAdc, IC=50mAdc)
* Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
---
---
250
---
---
---
0.5
Vdc
1.0
Vdc
NPN General
Purpose Amplifier
Transistor
TO-92
A
E
B
C
D
E
G
BC
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.170
.190
4.33
4.83
B
.170
.190
4.30
4.83
C
.550
.590
13.97 14.97
D
.010
.020
0.36
0.56
E
.130
.160
3.30
3.96
G
.096
.104
2.44
2.64
Revision: A
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2011/01/01