2N5321 Datasheet, PDF (1/2 Pages) Micro Commercial Components – Medium Power Silicon NPN Planar Transistor

MCC
TM
Micro Commercial Components

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20736 Marilla Street Chatsworth

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Features
• V_CEO=50V
• I_CM=2A
• Ptot=1.0W (Tamb=25 ^OC )
• Rth(jc)max=17.5^OC/W, Rth(ja)max = 175^OC/W
• Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
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Symbol
V_CEO
V_CBO
V_EBO
VCEV
I_C
T_J
TSTG
Rating
Collector-Emitter Voltage(IB=0)
Collector-Base Voltage(IE=0)
Emitter-Base Voltage(IC=0)
Collector-Emitter Voltage(VBE=1.5v)
Collector Current
Operating Junction Temperature
Storage Temperature
Rating
50
75
5.0
75
1200
-65 to +200
-65 to +200
Unit
V
V
V
V
mA
O_C
O_C
2N5321
Medium Power
Silicon NPN
Planar Transistor
TO-39
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
Min
Max Units
V(BR)CEO*
V _(BR)CEV
V (BR)EBO
Collector-Emitter Breakdown Voltage
(IC=10mA, IB=0)
Collector-Emitter Breakdown Voltage
(I_C=0.1mA, VBE=1.5V))
Emitter-Base Breakdown Voltage
V_{BE(Note 2)}
(I_E=0.1mA, I_C=0)
Base-Emitter Voltage
(I_C=500mA, Vce=4V)
I_CBO
Collector-Base Cut-off Current
(V_CB=60V, I_E=0)
I_EBO
Emitter-Base Cut-off Current
(V_EB=4.0V, I_C=0)
ON CHARACTERISTICS
50
---
V
75
---
V
5.0
---
V
---
1.4
V
---
5.0 uA
--- 0.5TYP uA
h_FE*
V _CE(sat)*
f_T
TON
TOFF
DC CURRENT GAIN
(IC=0.5A, VCE=4V)
Collector-Emitter Saturation Voltage
(IC=500mA, IB=50mA)
Transistion Frequency
(V_CE=4V, I_C=0.05A, f=10MH_Z)
Turn-On Time
(IC=500mA Vcc=30V IB1=50mA)
Turn-Off Time
(Ic=500mA Vcc=30V Ib1=-Ib2=50mA)
40
---
50
250 ---
0.8
V
---
MH_Z
80
ns
800
ns
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
2.Pulsed: Pulse duration = 300us, duty cycle = 1 %
DIMENSIONS
INCHES
MM
DIM MIN MAX
MIN
A
._-3_-3_--5_- .370 8.509
B
----- .334
-----
C
----- .260
-----
MAX
9.40
8.50
6.60
NOTE
-
-
D
.50
-----
12.7
-----
E
.200
5.08
-7<3
F
.029 .045
7.366
11.43
G
----- .050
-----
1.27
H
.009 .031
0.229
7.874
J
44°
46°
44°
46°
K
.028 .034
0.711
0.864
L
.016 .021
0.406
0.533
Revision: A
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2011/01/01