1SS196 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APPLICATION)

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1SS196
Features
• Low Leakage Current
• Surface Mount SOT-23 Package
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
x Marking Code : G3
Maximum Ratings
Reverse Voltage
Forward Current
Power Dissipation @ TA=25^OC
Storage Temperature Range
Junction Temperature
VR
80V
I_F
100mA
PD
150mW
T_stg
-55^OC to +150^OC
Tj
150^OC
150mW
Switching Diodes
SOT-23
A
D
CB
F
E
G
H
J
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Reverse Voltage
V_R
80V
Minimum Reverse
Breakdown Voltage
Maximum Forward
Voltage
Maximum Reverse
Voltage Leakage
Current
V_(BR)
VF
IR
80V
1.2V
0.5uA
I_R=100uA
T_A = 25^OC
T_A= 25^OC
IF = 100mA;
VR=80Volts
T_A = 25^OC
Maximum Diode
C_D
3.0pF Measured at
Capacitance
f=1.0MHz,
V_R=0
Maximum Reverse
t_rr
4.0ns
Recovery Time
K
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
.110
.120
2.80
3.04
B
.083
.098
2.10
2.64
C
.047
.055
1.20
1.40
D
.035
.041
.89
1.03
E
.070
.081
1.78
2.05
F
.018
.024
.45
.60
G
.0005
.0039
.013
.100
H
.035
.044
.89
1.12
J
.003
.007
.085
.180
K
.015
.020
.37
.51
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
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2011/01/01