1SS184 Datasheet, PDF (1/3 Pages) Toshiba Semiconductor – DIODE (ULTRA HIGH SPEED SWITCHING APLICATION)

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1SS184
Features
x Low Forward Voltage
x Low Leakage Current
x Surface Mount SOT-23 Package
• Epoxy meets UL 94 V-0 flammability rating
• Moisture Sensitivity Level 1
Pin Configuration Top View
B3
150mW High Speed
Switching Diodes
80 Volt
SOT-23
A
D
Maximum Ratings
Parameter
Non-Repetitive Peak Reverse Voltage
Reverse Voltage
Average Rectified Output Current
Forward Continuous Current
Power Dissipation @ T_A=25к
Storage Temperature Range
Junction Temperature
Symbol
V_RM
V_R
I_O
I_FM
P_D
T_stg
T_j
Rating
85
80
100
300
150
-55 to +125
125
Unit
V
V
mA
mA
mW
к
к
Electrical Characteristics @ 25к Unless Otherwise Specified
Parameter
Minimum Reverse
Breakdown Voltage
(I_R=100µA)
Maximum Forward Voltage
(I_F = 1mA)
(I_F = 10mA)
(I_F = 100mA)
Maximum Reverse Voltage
Leakage Current
(V_R=30V)
(V_R=80V)
Capacitance between
Teminals*
Maximum Reverse Recovery
Time
(I_F = I_R=10mA, I_rr=0.1hI_R)
* Measured at f=1.0MHz, V_R=0
Symbol
V_(BR)
V_F
I_R
C_T
t_rr
Min. Typ.
80
---
---
0.60
---
0.72
---
0.90
---
---
---
---
---
0.9
---
1.6
Max. Unit
---
V
---
---
V
1.2
0.1
0.5
µA
3.0
pF
4.0
ns
F
E
CB
G
H
J
K
DIMENSIONS
INCHES
DIM
MIN
MAX
A
.110
.120
B
.083
.098
C
.047
.055
D
.035
.041
E
.070
.081
F
.018
.024
G
.0005
.0039
H
.035
.044
J
.003
.007
K
.015
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
Suggested Solder
Pad Layout
.031
.800
NOTE
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
Revision: A
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1 of 3
2011/01/01