1N914_11 Datasheet, PDF (1/4 Pages) Micro Commercial Components – 500mW 100 Volt Silicon Epitaxial Diodes

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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1N914(A)(B)

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• Moisture Sensitivity Level 1
• Low Current Leakage
• Compression Bond Construction
• Low Cost
• Marking : Cathode band and type number
• Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
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• Operating Temperature: -55^OC to +150^OC
• Storage Temperature: -55^OC to +150^OC
• Maximum Thermal Resistance; 300^OC/W Junction To Ambient
Electrical Characteristics @ 25^OC Unless Otherwise Specified
Maximum Repetitive
Reverse Voltage
Average Rectified
Forward Current
Power Dissipation
Junction Temperature
Peak Forward Surge
Current
VRRM
IO
P_D
T_J
I_FSM
100V
200mA
500mW
150^OC
1.0A
4.0A
Minimum Breakdown
Voltage
V_R
100V
75V
Maximum
Instantaneous
Forward Voltage
1N914
1N914 A
VF
1.0V
1N914 B
1N914 B
720mV
Maximum Reverse
25nA
Current
I_R
5.0uA
50uA
Typical Junction
Capacitance
C_J
4.0pF
Reverse Recovery
Time
T_rr
4.0nS
*Pulse test: Pulse width 300 usec, Duty cycle 2%
Pulse Width=1.0
second
Pulse Width=1.0
microsecond
I_R=100uA,
I_R=5.0uA
T_J = 25^OC
IFM = 10mA;
I_FM = 20mA;
IFM = 100mA;
I_FM = 5.0mA;
VR=20V, TJ=25^OC,
V_R=75V, T_J=25^OC,
V_R=20V, T_J=150^OC
Measured at 1.0MHz,
V_R=0V
I_F=10mA
V_R = 6V
R_L=100 Ù, I_rr=1.0mA
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 5.
500mW 100 Volt
Silicon Epitaxial
Diodes
DO-35
D
A
Cathode
Mark
B
D
C
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
A
---
.166
---
B
---
.079
---
C
---
.020
---
D
1.000
---
25.40
MAX
4.2
2.00
.52
---
NOTE
Revision: A
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2011/01/01