 English |
|
|
|
|
|
|
|
| 1N914 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diode | |||
| |||
|
MCC
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
1N914(A)(B)
)HDWXUHV
⢠Low Current Leakage
⢠Compression Bond Construction
⢠Low Cost
500mW 100 Volt
Silicon Epitaxial
Diodes
0D[LPXP5DWLQJV
⢠Operating Temperature: -55OC to +150OC
⢠Storage Temperature: -55OC to +150OC
⢠Maximum Thermal Resistance; 300OC/W Junction To Ambient
Electrical Characteristics @ 25OC Unless Otherwise Specified
Maximum Repetitive
Reverse Voltage
Average Rectified
Forward Current
Power Dissipation
Junction Temperature
Peak Forward Surge
Current
VRRM
IO
PD
TJ
IFSM
100V
200mA
500mW
150OC
1.0A
4.0A
Minimum Breakdown
Voltage
VR
100V
75V
Maximum
Instantaneous
Forward Voltage
1N914
1N914 A
VF
1.0V
1N914 B
1N914 B
720mV
Maximum Reverse
25nA
Current
IR
5.0uA
50uA
Typical Junction
Capacitance
CJ
4.0pF
Reverse Recovery
Time
Trr
4.0nS
*Pulse test: Pulse width 300 usec, Duty cycle 2%
Pulse Width=1.0
second
Pulse Width=1.0
microsecond
IR=100uA,
IR=5.0uA
TJ = 25OC
IFM = 10mA;
IFM = 20mA;
IFM = 100mA;
IFM = 5.0mA;
VR=20V, TJ=25OC,
VR=75V, TJ=25OC,
VR=20V, TJ=150OC
Measured at 1.0MHz,
VR=0V
IF=10mA
VR = 6V
RL=100 Ã, Irr=1.0mA
DO-35
D
A
Cathode
Mark
B
D
C
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
A
---
.166
---
B
---
.079
---
C
---
.020
---
D
1.000
---
25.40
MAX
4.2
2.00
.52
---
NOTE
www.mccsemi.com
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese