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1N4448_12 Datasheet, PDF (1/4 Pages) Vishay Siliconix – Small Signal Fast Switching Diodes
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Chatsworth

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Features
• Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
• Low Current Leakage
• Metalurgically Bonded Construction
• Low Cost
• Marking : Cathode band and type number
• Moisture Sensitivity Level 1
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 35 °C/W Junction To Ambient
1N4448
500mW 100Volt
Switching Diode
DO-35
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
Peak Reverse
Voltage
VR
75V
VRM
100V
Average Rectified
Current
IO
150mA Resistive Load
f >= 50Hz
Power Dissipation
Junction
Temperature
PTOT
TJ
500mW
150°C
Peak Forward Surge
IFSM
Current
500mA t<1s
Instantaneous
Forward Voltage
VF
1.0V(MAX) IFM = 100mA;
0.62-0.72V IFM = 5.0mA
Maximum DC
VR=20Volts
Reverse Current At
IR
25nA TJ = 25°C
Rated DC Blocking
50µA TJ = 150°C
Voltage
5uA VR=75Volts
Typical Junction
CJ
4pF Measured at
Capacitance
1.0MHz, VR=4.0V
Reverse Recovery
Trr
4nS IF=10mA
Time
VR = 6V
RL=100Ω
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 7(C)-I.
D
A
Cathode
Mark
B
D
C
DIMENSIONS
INCHES
DIM
MIN
MAX
A
---
.166
B
---
.079
C
---
.020
D
1.000
---
MM
MIN
---
---
---
25.40
MAX
4.2
2.00
.52
---
NOTE
Revision: B
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2012/01/01