1N4448 Datasheet, PDF (1/3 Pages) Rectron Semiconductor – SIGNAL DIODE

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  omponents
21201 Itasca Street Chatsworth

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Features
• Low Current Leakage
• Metalurgically Bonded Construction
• Low Cost
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 35 °C/W Junction To Ambient
1N4448
500mW 100Volt
Switching Diode
DO-35
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
Peak Reverse
Voltage
V_R
75V
V_RM
100V
Average Rectified
Current
I_O
150mA Resistive Load
f >= 50Hz
Power Dissipation
Junction
Temperature
P_TOT
T_J
500mW
150°C
Peak Forward Surge
I_FSM
Current
500mA t<1s
Instantaneous
Forward Voltage
V_F
1.0V(MAX) I_FM = 100mA;
0.62-0.72V I_FM = 5.0mA
Maximum DC
V_R=20Volts
Reverse Current At
I_R
25nA T_J = 25°C
Rated DC Blocking
50µA T_J = 150°C
Voltage
5uA VR=75Volts
Typical Junction
C_J
4pF Measured at
Capacitance
1.0MHz, V_R=4.0V
Reverse Recovery
T_rr
4nS I_F=10mA
Time
V_R = 6V
R_L=100Ω
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
D
A
Cathode
Mark
B
D
C
DIMENSIONS
INCHES
DIM
MIN
MAX
A
---
.166
B
---
.079
C
---
.020
D
1.000
---
MM
MIN
---
---
---
25.40
MAX
4.2
2.00
.52
---
NOTE
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