1N4154 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Silicon Epitaxial Planar Diode

MCC
Features
• Low Current Leakage
• Compression Bond Construction
• Low Cost

  
  
 
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1N4154
500mW 35 Volt
Silicon Epitaxial Diode
Maximum Ratings
• Operating Temperature: -65°C to +175°C
• Storage Temperature: -65°C to +175°C
• Maximum Thermal Resistance; 300°C/W Junction To Ambient
DO-35
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
Peak Reverse
Voltage
V_R
25V
V_RM
35V
Average Rectified
Current
I_O
150mA Resistive Load
f > 50Hz
Power Dissipation
Junction
Temperature
P_TOT
T_J
500mW
200°C
Peak Forward Surge
I_FSM
500mA 8.3ms, half sine
Current
Maximum
Instantaneous
Forward Voltage
Maximum DC
V_F
1.0V I_FM = 30mA;
T_J = 25°C*
Reverse Current At
Rated DC Blocking
Voltage
I_R
100nA V_R=25Volts
T_J = 25°C
Typical Junction
C_J
4pF Measured at
Capacitance
1.0MHz, V_R=4.0V
Reverse Recovery
T_rr
4nS I_F=10mA
Time
V_R = 6V
R_L=100Ω
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
D
A
Cathode
Mark
B
D
C
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
A
---
.166
---
B
---
.079
---
C
---
.020
---
D
1.000
---
25.40
MAX
4.2
2.00
.52
---
NOTE
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