1N4151_11 Datasheet, PDF (1/4 Pages) Micro Commercial Components – 500mW Silicon Switching Diode

MCC
TM
Micro Commercial Components
Features

  omponents
21201 Itasca Street Chatsworth

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l Planar Passivated
l Metallurgically bonded Construction
l Moisture Sensitivity Level 1
Maximum Ratings
l Operating Temperature: -55^oC to +150^oC
l Storage Temperature: -55^oC to +200^oC
Electrical Characteristics @ 25^oC Unless Otherwise Specified
Reverse Voltage
1N4151
1N4154
Peak Reverse
Voltage
1N4151
1N4154
Average
Rectifierd Current
Power Dissipation
Junction
Temperature
Peak Forward
Surge Current
1N4151
1N4154
Maximum
Instantaneous
Forward Voltage
Maximum DC
Reverse Current
At Rated DC
Blocking Voltage
1N4151
1N4154
Typical Junction
Capacitance
1N4151
1N4154
Maximum
Reverse
Recovery Time
V_R
V_RM
Io
P_TOT
T_J
I_{F S M}
V_F
I_R
C_J
T_rr
50V
25V
75V
35V
150mA
Resistive
f>=50Hz
Load
500mW
200^oC
50mA ^{8.3ms,half sine}
30mA
1.0V
I_F= 3 0 m A
T _J=25^o C*
T _A=25 ^oC
0.05uA ^V R1^=50V
0.1uA V _R2=25V
2.0pF
4.0pF
2.0nS
Measured at
1.0MHz,V _R=4.0V
I_F= 1 0 m A
V _R=6V
R _L=100ohm
*Pulse test: Pulse width 300 sec, Duty cycle 2%
1N4151
1N4154
500mW Silicon
Switching Diode
DO-35
D
A
Cathode
Mark
B
D
C
DIM
A
B
C
D
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
-----
0.166
-----
4.20
-----
0.079
-----
2.00
-----
0.020
-----
0.52
1.000
-----
25.40
-----
NOTE
Revision: A
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2011/01/01