1N4151 Datasheet, PDF (1/3 Pages) NXP Semiconductors – High-speed diodes

MCC

  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
1N4151
Features
• Low Current Leakage
• Compression Bond Construction
• Low Cost
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 35°C/W Junction To Ambient
500mW 75 Volt Silicon
Epitaxial Diode
DO-35
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
V_RM
75V
DC Blocking Voltage
V_R
50V
Average Rectified
I_O
150mA Resistive Load
Current
f > 50Hz
Power Dissipation
P_TOT
500mW
Junction
Temperature
T_J
150°C
Peak Forward Surge
I_FSM
500mA 8.3ms, half sine
Current
Maximum
Instantaneous
Forward Voltage
V_F
1.0V I_FM = 50mA;
T_J = 25°C*
Maximum DC
Reverse Current At
I_R
50nA V_R=50Volts
Rated DC Blocking
T_J = 25°C
Voltage
Typical Junction
Capacitance
C_J
2pF Measured at
1.0MHz, V_R=4.0V
Reverse Recovery
T_rr
4nS I_F=10mA
Time
V_R = 6V
R_L=100Ω
*Pulse test: Pulse width 300 µsec, Duty cycle 2%
D
A
Cathode
Mark
B
D
C
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
A
---
.166
---
B
---
.079
---
C
---
.020
---
D
1.000
---
25.40
MAX
4.2
2.00
.52
---
NOTE
www.mccsemi.com