1N4150_12 Datasheet, PDF (1/3 Pages) Vishay Siliconix – Small Signal Fast Switching Diodes

MCC
TM
Micro Commercial Components

  omponents
20736 Marilla Street Chatsworth

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1N4150
Features
• Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
• Low Current Leakage
• Compression Bond Construction
• Low Cost
• Marking : Cathode band and type number
• Moisture Sensitivity Level 1
500mW 75 Volt Silicon
Epitaxial Diode
Maximum Ratings
• Operating Temperature: -55°C to +150°C
• Storage Temperature: -55°C to +150°C
• Maximum Thermal Resistance; 300°C/W Junction To Ambient
DO-35
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage
V_R
50V
Breakdown Voltage
Average Rectified
Current
Power Dissipation
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
B_V
I_O
P_TOT
I_FSM
V_F
75V IR=5.0μA
200mA
500mW
1.0A
4.0A
Pulse Width=1.0S
Pulse Width=1.0µS
1.0V
I_FM = 100mA;
T_J = 25°C*
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
I_R
100nA
100µA
V_R=50Volts
T_J = 25°C
T_J = 150°C
Maximum Junction
Capacitance
C_J
2.5pF
Measured at 1.0MHz,
V_R=0
Maximum Reverse
Recovery Time
I_F=10mA
T_rr
4.0nS V_R=6.0V
R_L=100Ω
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 7(C)-I.
D
A
Cathode
Mark
B
D
C
DIMENSIONS
INCHES
DIM
MIN
MAX
A
---
.166
B
---
.079
C
---
.020
D
1.000
---
MM
MIN
---
---
---
25.40
MAX
4.2
2.00
.52
---
NOTE
Revision: C
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1 of 3
2012/12/04