DS2030W Datasheet, PDF (9/12 Pages) Maxim Integrated Products – 3.3V Single-Piece 256k Nonvolatile SRAM

DS2030W 3.3V Single-Piece 256k
Nonvolatile SRAM
Functional Diagram
CE
V_TP REF
DELAY TIMING
CIRCUITRY
RST
CURRENT-LIMITING
RESISTOR
V_CC
V_SW REF
CHARGER
UNINTERRUPTED
POWER SUPPLY
FOR THE SRAM
V_CC
CE
OE
SRAM
WE
DQ0–7
REDUNDANT LOGIC
GND
OE
WE
A0–A14
CURRENT-LIMITING
REDUNDANT
ML
RESISTOR
SERIES FET
BATTERY-CHARGING/SHORTING
PROTECTION CIRCUITRY (UL RECOGNIZED)
DS2030W
Detailed Description
The DS2030W is a 256kb (32kb x 8 bits) fully static, NV
memory similar in function and organization to the
DS1230W NV SRAM, but containing a rechargeable ML
battery. The DS2030W NV SRAM constantly monitors
V_CC for an out-of-tolerance condition. When such a con-
dition occurs, the lithium energy source is automatically
switched on and write protection is unconditionally
enabled to prevent data corruption. There is no limit to
the number of write cycles that can be executed and no
additional support circuitry is required for microprocessor
interfacing. This device can be used in place of SRAM,
EEPROM, or flash components.
The DS2030W assembly consists of a low-power SRAM,
an ML battery, and an NV controller with a battery charg-
er, integrated on a standard 256-ball, 27mm² BGA sub-
strate. Unlike other surface-mount NV memory modules
that require the battery to be removable for soldering,
the internal ML battery can tolerate exposure to con-
vection reflow soldering temperatures allowing this sin-
gle-piece component to be handled with standard BGA
assembly techniques.
The DS2030W also contains a power-supply monitor
output, RST, which can be used as a CPU supervisor
for a microprocessor.
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