MAX17000A_13 Datasheet, PDF (7/32 Pages) Maxim Integrated Products – Complete DDR2 and DDR3 Memory Power-Management Solution

MAX17000A
Complete DDR2 and DDR3 Memory
Power-Management Solution
ELECTRICAL CHARACTERISTICS (continued)
(V_IN = 12V, V_CC = V_DD = V_SHDN = V_REFIN = 5V, V_CSL = 1.8V, STDBY = SKIP = AGND, T_A = -40°C to +85°C, unless otherwise noted.)
(Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
REFERENCE BUFFER (VTTR)
VTTR Output Accuracy (Adj)
VTTR Output Accuracy (Preset)
REFIN to VTTR
I_VTT = ±1mA
-10
I_VTT = ±3mA
-20
V_CSL/2 to VTTR
I_VTT = ±1mA
-10
I_VTT = ±3mA
-20
FAULT DETECTION (SMPS)
PGOOD1 Output Low Voltage
I_SINK = 3mA
FAULT DETECTION (VTT)
PGOOD2 Output Low Voltage
I_SINK = 3mA
FAULT DETECTION
MAX UNITS
+10
mV
+20
+10
mV
+20
0.4
V
0.4
V
V_CC Undervoltage-Lockout
Threshold
V_UVLO(VCC)
Rising edge, IC disabled below this level;
hysteresis = 200mV
4.0
CURRENT LIMIT
Valley Current-Limit Threshold
V_LIMIT V_CSH - V_CSL
15
SMPS GATE DRIVERS
DH Gate-Driver On-Resistance
DL Gate-Driver On-Resistance
R_DH BST - LX forced to 5V
DL high
R_DL
DL low
DL rising
10
Dead Time
t_DEAD
DL falling
15
INPUTS AND OUTPUTS
Logic-Input Threshold
SHDN, STDBY, SKIP OVP, rising edge
1.3
hysteresis = 300mV/600mV (min/max)
4.4
V
25
mV
5


5


3
ns
2
V
Note 1: Limits are 100% production tested at T_A = +25°C. Maximum and minimum limits over temperature are guaranteed by design
and characterization.
Note 2: On-time and off-time specifications are measured from 50% point at the DH pin with LX = GND, V_BST = 5V, and a 250pF
capacitor connected from DH to LX. Actual in-circuit times might differ due to MOSFET switching speeds.
Maxim Integrated
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