MAX5062_07 Datasheet, PDF (4/20 Pages) Maxim Integrated Products – 125V/2A, High-Speed, Half-Bridge MOSFET Drivers

125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
ELECTRICAL CHARACTERISTICS (continued)
(V_DD = V_BST = +8V to +12.6V, V_HS = GND = 0V, BBM = open, T_A = -40°C to +125°C, unless otherwise noted. Typical values are at
V_DD = V_BST = +12V and T_A = +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
MIN
SWITCHING CHARACTERISTICS FOR HIGH- AND LOW-SIDE DRIVERS (V_DD = V_BST = +12V)
C_L = 1000pF
Rise Time
t_R
C_L = 5000pF
C_L = 10,000pF
C_L = 1000pF
Fall Time
t_F
C_L = 5000pF
C_L = 10,000pF
Turn-On Propagation Delay Time
t_{D_ON}
Figure 1, C_L = 1000pF
(Note 3)
CMOS
TTL
Turn-Off Propagation Delay Time
t_{D_OFF}
Figure 1, C_L = 1000pF
(Note 3)
CMOS
TTL
Delay Matching Between
Inverting Input to Output and
Noninverting Input to Output
t_MATCH1
C_L = 1000pF, BBM open for MAX5064,
Figure 1 (Note 3)
TYP MAX UNITS
7
33
ns
65
7
33
ns
65
30
55
ns
35
63
30
55
ns
35
63
2
8
ns
Delay Matching Between Driver-
Low and Driver-High
t_MATCH2
C_L = 1000pF, BBM open for MAX5064,
Figure 1 (Note 3)
2
8
ns
Break-Before-Make Accuracy
(MAX5064 Only)
Internal Nonoverlap
R_BBM = 10kΩ
R_BBM = 47kΩ (Notes 3, 4)
R_BBM = 100kΩ
16
40
56
72
ns
95
1
ns
Minimum Pulse-Width Input Logic
(High or Low) (Note 5)
t_PW-MIN
V_DD = V_BST = 12V
V_DD = V_BST = 8V
135
ns
170
Note 1: All devices are 100% tested at T_A = +125°C. Limits over temperature are guaranteed by design.
Note 2: Ensure that the V_DD-to-GND or BST-to-HS voltage does not exceed 13.2V.
Note 3: Guaranteed by design, not production tested.
Note 4: Break-before-make time is calculated by t_BBM = 8ns x (1 + R_BBM / 10kΩ).
Note 5: See the Minimum Pulse Width section.
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