MAX4238 Datasheet, PDF (4/10 Pages) Maxim Integrated Products – Ultra-Low Offset/Drift, Low-Noise, Precision SOT23 Amplifiers

Ultra-Low Offset/Drift, Low-Noise,
Precision SOT23 Amplifiers
ELECTRICAL CHARACTERISTICS
(2.7V ≤ V_CC ≤ 5.5V, V_CM = GND = 0V, V_OUT = V_CC/2, R_L = 10kΩ connected to V_CC/2, SHDN = V_CC, T_A = -40^°C to +125^°C, unless other-
wise noted.) (Note 5)
PARAMETER
Input Offset Voltage
Input Offset Drift
Common-Mode Input Voltage
Range
SYMBOL
V_OS (Note 1)
TCV_OS (Note 1)
CONDITIONS
T_A = -40°C to +85°C
T_A = -40°C to +125°C
V_CM Inferred from CMRR test
MIN
GND -
0.05
TYP
10
MAX
2.5
3.5
V_CC -
1.4
UNITS
µV
nV/°C
V
GND - 0.05V ≤ T_A = -40°C to +85°C
115
Common-Mode Rejection Ratio
CMRR VCM ≤ VCC -
dB
1.4V (Note 1) TA = -40°C to +125°C
90
Power-Supply Rejection Ratio
PSRR 2.7V ≤ V_CC ≤ 5.5V (Note 1)
120
dB
Large-Signal Voltage Gain
Output Voltage Swing
Output Leakage Current
Supply Voltage Range
Supply Current
Shutdown Logic High
Shutdown Logic Low
Shutdown Input Current
A_VOL
R_L = 10kΩ, _{TA = -40°C to +85°C}
125
0.1V ≤ V_OUT
≤ V_CC - 0.1V
(Note 1)
T_A = -40°C to +125°C
95
R_L = 1kΩ
(Note 1)
0.1V ≤ V_OUT ≤ V_CC - 0.1V, ₁₂₀
T_A = -40°C to +85°C
0.2V ≤ V_OUT ≤ V_CC - 0.2V, ₈₀
T_A = -40°C to +125°C
V_OH/V_OL
R_L = 10kΩ
V_CC - V_OH
V_OL
R_L = 1kΩ
V_CC - V_OH
V_OL
0V ≤ V_OUT ≤ V_CC, SHDN = GND (Note
V_CC Inferred by PSRR test
2.7
I_CC
SHDN = V_CC, no load, V_CC = 5.5V
SHDN = GND, V_CC = 5.5V
V_IH
2.2
V_IL
0V ≤ V _SHDN ≤ V_CC
dB
dB
20
20
mV
100
100
2
µA
5.5
V
900
µA
2
V
0.7
V
2
µA
Note 1: Guaranteed by design. Thermocouple and leakage effects preclude measurement of this parameter during production
testing. Devices are screened during production testing to eliminate defective units.
Note 2: IN+ and IN- are gates to CMOS transistors with typical input bias current of 1pA. CMOS leakage is so small that it is
impractical to test and guarantee in production. Devices are screened during production testing to eliminate defective units.
Note 3: Leakage does not include leakage through feedback resistors.
Note 4: Overload recovery time is the time required for the device to recover from saturation when the output has been
driven to either rail.
Note 5: Specifications are 100% tested at T_A = +25^°C, unless otherwise noted. Limits over temperature are guaranteed by design.
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