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MAX15091 Datasheet, PDF (4/15 Pages) Maxim Integrated Products – Solution with Current Report Output
MAX15091/MAX15091A
2.7V to 18V, 9A, Integrated Hot-Swap
Solution with Current Report Output
Electrical Characteristics (continued)
(VIN = VCC = 2.7V to 18V, TA = TJ = -40°C to +85°C, unless otherwise noted. Typical values are at VIN = 12V, RCB = 25kΩ, and TA
= +25°C.) (Note 2)
PARAMETER
SYMBOL
CONDITIONS
MIN TYP MAX UNITS
OUTPUTS
FAULT, PG Output Low
Voltage
VOL
Low-impedance state,
IFAULT = +5mA, IPG = +5mA
0.4
V
FAULT, PG Output High
Leakage Current
CURRENT REPORT
IOH
High-impedance state,
VFAULT = 16V, VPG = 16V
1
µA
ISENSE Full-Scale Current
ISENSE Gain Ratio
ISENSE Voltage Range
ISENSE Offset Error
ISENSE Gain Error
PG THRESHOLD
IISENSE
VISENSE
IISENSE_OFF
IISENSE_ERROR
ISENSE/IOUT
VIN = 12V
TA = +25°C
TA = -40°C to +85°C
TA = +25°C
TA = -40°C to +85°C
1.53
mA
170
µA/A
0
2.5
V
-32
+32
µA
-45
+45
-3
+3
%
-5.5
+5.5
PG Threshold
VPG
Measured at VOUT, VIN = 12V
0.9 x
VIN
V
PG Assertion Delay
tPG
From VOUT > VPG and
(VGATE - VIN) > 3V
12
16
20
ms
OUT to IN Short-Circuit
Detection Threshold
VIOSHT
Measured at VOUT, VIN = 12V
0.9 x
VIN
V
OUT Precharge Threshold
THERMAL SHUTDOWN
VPC
Measured at VOUT, VIN = 12V
0.5 x
VIN
V
Thermal Shutdown
TSD
TJ rising
+150
°C
Thermal-Shutdown Hysteresis
TJ falling
20
°C
Note 2: All devices are 100% production tested at TA = +25°C. Limits over temperature are guaranteed by design.
Note 3: 25kΩ is the maximum allowed external resistance value to be connected at CB pin to GND for safe operation. All devices
are tested with 8.33kΩ, the parameter specified at RCB = 25kΩ is guaranteed by bench characterization and correlation,
with respect to the tested parameter at RCB = 8.33kΩ. The formula that describes the relationship between RCB and the
circuit-breaker current threshold is: ICB = RCB/2777.8.
Note 4: The current-limit slow-comparator response time is weighed against the amount of overcurrent so the higher the
overcurrent condition, the faster the response time.
Note 5: Foldback is active during the startup phase so the internal power MOSFET operates within SOA.
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