DS9503 Datasheet, PDF (3/4 Pages) Dallas Semiconductor – ESD Protection Diode with Resistors

ABSOLUTE MAXIMUM RATINGS*
Operating Temperature
Storage Temperature
Soldering Temperature
Continuous DC Current Through Package
–40°C to +85°C
–55°C to +125°C
260°C for 10 seconds
80 mA
DS9503
 This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods of time may affect reliability
ELECTRICAL CHARACTERISTICS
PARAMETER
Leakage Current
Avalanche Voltage
Trigger Voltage
Trigger Current
Holding Voltage
Holding Current
Forward Voltage (-10 mA)
Forward Current (-0.7V)
Maximum Peak Current
Continuous Current Through Diode
Isolation Resistance
SYMBOL
I_L
V_AV
V_TRIGGER
I_TRIGGER
V_HOLD
I_HOLD
V_F
I_F
I_PP
I_CC
R_I
MIN
7.4
5.5
11
CAPACITANCE
PARAMETER
SYMBOL
Junction Capacitance (5V)
C_J5
Junction Capacitance (0V)
C_J0
THERMAL RESISTANCE
PARAMETER
SYMBOL
Junction To Package
Junction To Ambient
R_JC
R_JA
NOTES:
1. At 7.0V.
2. All voltages are referenced from Cathode to Anode.
3. At 0.3 A.
4. Not production tested, guaranteed by design.
5. Typical values at room temperature.
6. See pulse specification.
MIN
MIN
TYP
30
10
-0.7
-10
2.0
5
TYP
40
70
TYP
(-40C to +85C)
MAX UNITS NOTES
100
nA
1
11.05
V
2,3
11
V
2, 4
1000 mA
4
V
2,4
mA
4
-0.8
V
5
-100
mA
5
A
6
80
mA

MAX
(t_A=25C)
UNITS NOTES
pF
2
pF
2
MAX
75
200
UNITS NOTES
K/W
K/W
3 of 4