DS28CN01_09 Datasheet, PDF (3/10 Pages) Maxim Integrated Products – 1Kb I2C/SMBus EEPROM with SHA-1 Engine

ABRIDGED DATA SHEET
1Kb I²C/SMBus EEPROM with SHA-1 Engine
ELECTRICAL CHARACTERISTICS (continued)
(T_A = -40°C to +85°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
Output Fall Time from V_IH(MIN) to
V_CC
2.0V
V_IL(MAX) with a Bus Capacitance
t_OF
from 10pF to 400pF (Notes 2, 11)
V_CC < 2.0V
Pulse Width of Spikes that are
Suppressed by the Input Filter
Input Current with an Input
Voltage Between 0.1V_CC and
0.9V_CCMAX
Input Capacitance
SCL Clock Frequency
Bus Timeout
Hold-Time (Repeated) START
Condition; After this Period, the
First Clock Pulse is Generated
Low Period of the SCL Clock
(Note 14)
High Period of the SCL Clock
Setup Time for a Repeated
START Condition
Data Hold Time (Notes 15, 16)
Data Setup Time
Setup Time for STOP Condition
Bus Free Time Between a STOP
and START Condition
Capacitive Load for Each Bus
Line
t_SP
(Note 2)
I_I
(Note 12)
C_I
f_SCL
t_TIMEOUT
(Note 2)
(Note 13)
(Note 13)
t_HD:STA (Note 14)
t_LOW
t_HIGH
V_CC
2.7V
V_CC
2.0V
V_CC < 2.0V
(Note 14)
t_SU:STA (Note 14)
t_HD:DAT
t_SU:DAT
t_SU:STO
V_CC
2.7V
V_CC
2.0V
V_CC < 2.0V
(Notes 2, 14, 17)
(Note 14)
t_BUF (Note 14)
C_B
(Notes 2, 14)
MIN
20 +
0.1C_B
20 +
0.1C_B
TYP
MAX
250
300
UNITS
ns
50
ns
-10
+10
μA
10
pF
400
kHz
25
75
ms
0.6
μs
1.3
1.5
μs
1.9
0.6
μs
0.6
μs
0.3
0.9
0.3
1.1
μs
0.3
1.5
100
ns
0.6
μs
1.3
μs
400
pF
Note 1: Specifications at -40°C are guaranteed by design and characterization only and not production tested.
Note 2: Guaranteed by design, characterization, and/or simulation only and not production tested.
Note 3: This specification is valid for each 8-byte memory row.
Note 4: Write-cycle endurance is degraded as T_A increases.
Note 5: Not 100% production tested; guaranteed by reliability monitor sampling.
Note 6: Data retention is degraded as T_A increases.
Note 7: Guaranteed by 100% production test at elevated temperature for a shorter time; equivalence of this production test to data
sheet limit at operating temperature range is established by reliability testing.
Note 8: EEPROM writes can become nonfunctional after the data retention time is exceeded. Long-time storage at elevated tem-
peratures is not recommended; the device can lose its write capability after 10 years at +125°C or 40 years at +85°C.
Note 9: All values are referred to V_IH(MIN) and V_IL(MAX) levels.
Note 10: See Figure 3.
Note 11: C_B = Total capacitance of one bus line in pF. If mixed with high-speed-mode devices, faster fall times according to I²C
Bus Specification v2.1 are allowed.
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