MAX5915 Datasheet, PDF (2/25 Pages) Maxim Integrated Products – Dual PCI 2.2 Hot-Swap Controllers

Dual PCI 2.2 Hot-Swap Controllers
ABSOLUTE MAXIMUM RATINGS
+12VIN to GND ...................................................-0.3V to +14.0V
-12VIN to GND........................................................-14V to +0.3V
-12VO_ to GND......................................+0.3V to (V_-12VIN - 0.3V)
+12VO_, 3.3VGATE_, 5VGATE_
to GND..................................................-0.3V to (V_+12VIN + 0.3V)
Any Other Pin to GND ...........................................-0.3V to +6.0V
Continuous Power Dissipation (T_A = +70°C)
28-Pin TSSOP (derate 23.8mW/°C above +70°C) ...........1.9W
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V_-12VIN = -12V, V_+12VIN = +12V, V_3.3VAUXIN = +3.3V, V_{ON_} = V_{AUXON_} = +5V, T_A = -40°C to +85°C, unless otherwise specified.
Typical values are at T_A = +25°C.)
PARAMETER
POWER SUPPLIES
Main Supply Input Voltage
Range
SYMBOL
V_+12VIN
CONDITIONS
MIN
TYP MAX UNITS
10.8
12
13.2
V
Main Supply Undervoltage
Lockout (UVLO)
V_+12UVLO
V_+12VIN rising
9.6
10
10.8
V
Main Supply UVLO Hysteresis
Main Input UVLO Delay Time
Supply Current
V_{UVLO, HYS}
t_{DEG, UVLO}
I_Q
Figures 1 and 2 (Note 1)
100
mV
1.6
ms
2.5
5.0
mA
+3.3V SUPPLY CONTROL
Gate Charge Current
I_{3.3VGATE_, CHG}
V_3.3VGATE _ = +6V, V_{3.3VSEN_} = +3.3V,
V_3.3VO_ = +3.3V
5
15
30
µA
Gate Discharge Current
I_{3.3VGATE_, DIS} V_3.3VGATE _ = +12V, V_{ON_} = 0
50
150
250
µA
Gate High Voltage
V_{3.3VGATE_, HIGH} I_3.3VGATE _ = 1µA
V_+12VIN -
0.5
V_+12VIN
V
Gate Low Voltage
3.3VO_ Input Bias Current
3.3VO_ Internal Pulldown
3.3VSEN_ Input Bias Current
Current-Limit Threshold
Output Undervoltage Threshold
V_{3.3VGATE_, LOW}
I_{3.3VO_, BIAS}
R_PD
I_{3.3VSEN_, BIAS}
V_{3.3V, LIM}
V_{3.3VIN, UV}
I_3.3VGATE _ = 1µA, V_ON_ = 0
V_3.3VO_ = +3.3V
V_ON_ = 0
V_3.3VSEN_ = +3.3V
V_3.3VGATE _ = +6V
V_3.3VGATE _ falling
0.1
0.4
V
20
µA
1
kΩ
10
µA
41
46
51
mV
2.79
2.89
2.99
V
Output Undervoltage Threshold
Hysteresis
30
mV
2 _______________________________________________________________________________________