MAX3886 Datasheet, PDF (2/17 Pages) Maxim Integrated Products – Multirate CDR with Integrated Serializer/Deserializer for GPON and BPON ONT Applications

Multirate CDR with Integrated Serializer/Deserializer
for GPON and BPON ONT Applications
ABSOLUTE MAXIMUM RATINGS
Supply Voltage Range (V_CC).................................-0.3V to +4.0V
CML Input Voltage Range (SDI±)...............-0.3V to (V_CC + 0.3V)
CML Output Current (SDO±, BENO±)...............................±22mA
LVDS Input Voltage Range
(PCKI±, PDI[3:0]±, BENI±)......................-0.3V to (V_CC + 0.3V)
LVDS Output Voltage Range
(RCKO±, PDO[3:0]±, PCKO±) ................-0.3V to (V_CC + 0.3V)
LVCMOS Input Voltage Range
(MSYM, MDDR, FRST)............................-0.3V to (V_CC + 0.3V)
Three-State Input Voltage Range
(MVCO)...................................................-0.3V to (V_CC + 0.3V)
LVCMOS Output Voltage Range
(LOCK, FERR) ........................................-0.3V to (V_CC + 0.3V)
Voltage Range at CFIL, RFCK1,
RFCK2, TP1, TP2, TP3, TP4 ...................-0.3V to (V_CC + 0.3V)
Continuous Power Dissipation (T_A = +70°C)
56-Pin TQFN (derate 47.6mW/°C above 70°C)..........3808mW
Operating Junction Temperature Range ...........-55°C to +150°C
Storage Temperature Range .............................-55°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
OPERATING CONDITIONS
PARAMETER
Operating Temperature
Power-Supply Voltage
Downstream/Upstream
Data Rates
Reference Frequency
Crystal Accuracy
Crystal ESR
Crystal Drive
Crystal Load Capacitance
Reference Clock Input Duty
Cycle
SYMBOL
T_A
V_CC
CONDITIONS
Internal or external oscillator
Includes aging, temperature, and other
contributors
Fundamental type, AT-strip cut
On-chip parallel capacitance
When driven by an LVCMOS clock source
MIN TYP MAX UNITS
-40
+85
°C
3.0
3.6
V
See Table 2
Gbps
19.4400
MHz
±250 ppm
10
60


100
μW
18
pF
40
60
%
ELECTRICAL CHARACTERISTICS
(V_CC = +3.0V to +3.6V, T_A = -40°C to +85°C. Typical values are at V_CC = +3.3V, T_A= +25°C, unless otherwise noted. LVDS outputs
terminated 100Ω differential, CML inputs terminated 100Ω differential, CML outputs terminated 100Ω differential.) (Note 1)
PARAMETER
SYMBOL
Supply Current
I_CC
CDR/DESERIALIZER SPECIFICATIONS
Serial Input Data Rate
Rate
CDR CID Immunity
CDR Sinusoidal Jitter Tolerance
SDI to SDO Jitter Transfer
f > f_C
CONDITIONS
MVCO = 1
MVCO = open
MVCO = 0
BER  10^-10 (Note 2)
BER  10^-10 (Note 3)
(Notes 4, 5)
MIN TYP MAX UNITS
240 310
mA
2488.32
1244.16
622.08
> 100
0.3
0.7
0.1
Mbps
Bits
UI_P-P
dB
2 _______________________________________________________________________________________