MAX16832A_12 Datasheet, PDF (2/10 Pages) Maxim Integrated Products – 2MHz, High-Brightness LED Drivers with Integrated MOSFET and High-Side Current Sense

2MHz, High-Brightness LED Drivers with
Integrated MOSFET and High-Side Current Sense
ABSOLUTE MAXIMUM RATINGS
IN, CS, LX, DIM to GND .........................................-0.3V to +70V
TEMP_I to GND .......................................................-0.3V to +6V
PGND to GND ......................................................-0.3V to +0.3V
CS to IN .................................................................-0.3V to +0.3V
Maximum Current into Any Pin
(except IN, LX, and PGND).............................................20mA
Continuous Power Dissipation (T_A = +70°C)
8-Pin SO (derate 18.9mW/°C above +70°C)...........1509.4mW
Operating Temperature Range
700mA (max) Output Current ........................-40°C to +125°C
1A (max) Output Current ...............................-40°C to +105°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Soldering (reflow).............................................................+260°C
Lead Temperature (soldering, 10s) .................................+300°C
Pin-to-Pin ESD Ratings......................................................±2.5kV
PACKAGE THERMAL CHARACTERISTICS (Note 1)
SO-EP
Junction-to-Ambient Thermal Resistance (θ_JA)...............+53°C/W
Junction-to-Case Thermal Resistance (θ_JC)......................+5°C/W
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V_IN = +24V, V_DIM = V_IN, T_A = T_J = -40°C to +125°C, unless otherwise noted. Typical values are at T_A = +25°C.)
PARAMETER
SYMBOL
CONDITIONS
MIN
Input Voltage Range
V_IN
6.5
Ground Current
No switching
Supply Current
UNDERVOLTAGE LOCKOUT (UVLO)
V_DIM < 0.6V, V_IN = 12V
Undervoltage Lockout
UVLO
V_CS = V_IN - 100mV, V_IN rising until V_LX <
0.5V_IN
V_CS = V_IN - 100mV, V_IN falling until V_LX >
0.5V_IN
Undervoltage-Lockout Hysteresis
SENSE COMPARATOR
Sense Voltage Threshold High
MAX16832A, V_IN - V_CS rising from 140mV
until V_LX > 0.5V_IN, V_DIM = 5V
197
V_SNSHI
MAX16832C, V_IN - V_CS rising from 140mV
until V_LX > 0.5V_IN, V_DIM = 5V
218
Sense Voltage Threshold Low
MAX16832A, V_IN - V_CS falling from 260mV
until V_LX < 0.5V_IN , V_DIM = 5V
185
V_SNSLO
MAX16832C, V_IN - V_CS falling from 260mV
until V_LX < 0.5V_IN, V_DIM = 5V
166
Propagation Delay to Output High
t_DPDH
Falling edge of V_IN - V_CS from 140mV to
260mV to V_LX > 0.5V_IN
Propagation Delay to Output Low
CS Input Current
t_DPDL
I_CSIN
Rising edge of V_CS - V_IN from 260mV to
140mV to V_LX < 0.5V_IN
V_IN - V_CS = 200mV, V_IN = V_CS
TYP
1.5
350
6.25
0.5
205
230
190
170
50
50
MAX
65
UNITS
V
mA
µA
6.5
V
6.0
V
213
mV
236
198
mV
180
ns
ns
3.5
µA
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