MAX16819 Datasheet, PDF (2/10 Pages) Maxim Integrated Products – 2MHz High-Brightness LED Drivers with High-Side Current Sense and 5000:1 Dimming

2MHz High-Brightness LED Drivers with
High-Side Current Sense and 5000:1 Dimming
ABSOLUTE MAXIMUM RATINGS
IN, CSN, DIM to GND .............................................-0.3V to +30V
V_CC, DRV to GND ....................................................-0.3V to +6V
CSN to IN...............................................................-0.3V to +0.3V
Maximum Current into Any Pin
(except IN, V_CC, and DRV)............................................±20mA
Continuous Power Dissipation (T_A = +70°C)
6-Pin TDFN (derate 18.17mW/^oC^* above +70°C).......1454mW
Operating Temperature Range .........................-40°C to +125°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Pin-to-Pin ESD Ratings (HB Model).....................................2.5kV
*As per JEDEC51 Standard (Single-Layer Board).
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V_IN = 12V, V_DIM = V_IN, C_VCC = 1µF, R_SENSE = 0.5Ω, T_A = T_J = -40°C to +125°C, unless otherwise noted. Typical values are at
T_A = +25°C.) (Note 1)
PARAMETER
Input Voltage Range
Maximum Current Regulator
Switching Frequency
SYMBOL
V_IN
f_SW
CONDITIONS
MIN TYP MAX UNITS
4.5
28.0
V
2
MHz
Ground Current
Supply Current
Undervoltage Lockout
Undervoltage Lockout Hysteresis
SENSE COMPARATOR
I_GND
I_IN
UVLO
DRV open
V_DIM < 0.6V
V_IN = V_CSN = V_DIM, V_IN rising from 4V until
V_DRV > V_CC - 0.5V
V_IN = V_CSN = V_DIM, V_IN falling from 6V,
V_DRV < 0.5V
1.5
mA
425
µA
4.7
5.0
V
4.5
0.5
V
Sense Voltage Threshold High
V_SNSHI
(V_IN - V_CSN) rising from 0V until V_DRV <
0.5V (MAX16820)
(V_IN - V_CSN) rising from 0V until V_DRV <
0.5V (MAX16819)
195
210
225
mV
213
230
246
Sense Voltage Threshold Low
(V_IN - V_CSN) falling from 0.26V until V_DRV >
176
190
204
(V_CC - 0.5V) (MAX16820)
V_SNSLO
mV
(V_IN - V_CSN) falling from 0.26V until V_DRV >
(V_CC - 0.5V) (MAX16819)
158
170
182
Propagation Delay to Output
High
t_DPDH
Falling edge of (V_IN - V_CSN) from 0.26V to
0V to DRV high, C_DRV = 1nF
82
ns
Propagation Delay to Output Low
Current-Sense Input Current
Current-Sense Threshold
Hysteresis
t_DPDL
I_CSN
CS_HYS
Rising edge of (V_IN - V_CSN) from 0V to
0.26V to DRV low, C_DRV = 1nF
(V_IN - V_CSN) = 200mV
MAX16819
MAX16820
82
ns
1
µA
56
70
mV
17
35
mV
2 _______________________________________________________________________________________