DG508A_10 Datasheet, PDF (2/9 Pages) Maxim Integrated Products – Monolithic CMOS Analog Multiplexers

Monolithic CMOS Analog Multiplexers
ABSOLUTE MAXIMUM RATINGS
Voltage Referenced to V-
V+ .....................................................................................+44V
GND ................................................................................. +25V
Digital Inputs, V_S and V_D (Note 1)...................-2V to (V+ + 2V)
or 20mA, whichever occurs first
Current (any terminal, except S or D) .................................30mA
Continuous Current, S or D .................................................20mA
Peak Current, S or D (pulsed at 1ms, 10% duty cycle max) ..40mA
Continuous Power Dissipation (T_A = +70°C)
Plastic DIP (derate 10.53mW/°C above +70°C) ...........842mW
Narrow SO (derate 8.70mWI°C above +70°C) .............696mW
Wide SO (derate 9.52mW/°C above +70°C).................762mW
CERDIP (derate 10.00mW/°C above +70°C) ................800mW
Operating Temperature Ranges:
DG50_ACJ/CWE ..................................................0°C to +70°C
DG50_ABK........................................................-20°C to +85°C
DG50_ADJ/DY/EWE..........................................-40°C to +85°C
DG50_AAK/MY ...............................................-55°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow)
PDIP, Wide SO, Narrow SO, CERDIP containing lead(Pb)..+240°C
PDIP, Wide SO, Narrow SO lead(Pb)-free ....................+260°C
Note 1: Signals on S_ or D_ exceeding V+ or V- are clamped by internal diodes. Limit forward-diode current to maximum current ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V+ = 15V, V- = -15V, V_GND = 0V, T_A = +25°C, unless otherwise noted.)
PARAMETER SYMBOL
CONDITIONS
SWITCH
Analog Signal
Drain-Source On-
Resistance
V_ANALOG
R_DS(ON)
Sequence each
switch on,
V_{A_L} = 0.8V,
V_{A_H} = 2.4V (Note 4)
V_D = 10V,
I_S = -200μA
V_D = -10V,
I_S = 200μA
DG508AA/M
DG509AA/M
MIN TYP MAX
DG508AD/E/B/C
DG509AD/E/B/C
MIN TYP MAX
-15
+15 -15
+15
170 400
170 450
130 400
130 450
Greatest Change
in Drain-Source
On-Resistance

R_DS(ON)
RDS(ON)
=


RDS(ON)
max
RDS(ON)
RDS(ON)
min ^

6
6
Between Channels
-10V
^VS
10V
Source Off-
Leakage Current
I_S(OFF) V_EN = 0V
V_S = 10V, V_D = -10V
0.002 0.5
0.002 1
V_S = -10V, V_D = 10V -0.5 -0.005
-1 -0.005
Drain Off- ^DG508A
Leakage
Current _DG509A
I_D(OFF)
V_EN = 0V
V_D = 10V, V_S = -10V
V_D = -10V, V_S = 10V
V_D = 10V, V_S = -10V
V_D = -10V, V_S = 10V
0.01 2
-2 -0.015
0.005 2
-2 -0.008
0.01
5
-5 -0.015
0.005 5
-5 -0.008
Drain On- ^DG508A
Leakage
Current _DG509A
I_D(ON)
Sequence each
switch on,
V_{A_L} = 0.8V
V_{A_H} = 2.4V
(Note 2)
V_S(all) = V_D = 10V
V_S(all) = V_D = -10V
V_S(all) = V_D = 10V
V_S(all) = V_D = -10V
0.015 2
-2 -0.03
0.007 2
-2 -0.015
0.015 5
-5 -0.03
0.007 5
-5 -0.015
UNITS
V

%
nA
nA
nA
2 _______________________________________________________________________________________