DS18B20_08 Datasheet, PDF (19/22 Pages) Dallas Semiconductor – Programmable Resolution 1-Wire Digital Thermometer

DS18B20
ABSOLUTE MAXIMUM RATINGS
Voltage Range on Any Pin Relative to Ground ..................................................................-0.5V to +6.0V
Operating Temperature Range .......................................................................................-55°C to +125°C
Storage Temperature Range...........................................................................................-55°C to +125°C
Solder Temperature .....................................................Refer to the IPC/JEDEC J-STD-020 Specification.
These are stress ratings only and functional operation of the device at these or any other conditions
above those indicated in the operation sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods of time may affect reliability.
DC ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS
Supply Voltage
Pullup Supply
Voltage
V_DD Local Power
V_PU
Parasite Power
Local Power
Thermometer
Error
t_ERR
-10°C to +85°C
-55°C to +125°C
Input Logic-Low
V_IL
Input Logic-High
Local Power
V_IH
Parasite Power
Sink Current
Standby Current
Active Current
DQ Input Current
Drift
I_L
I_DDS
I_DD
I_DQ
V_I/O = 0.4V
V_DD = 5V
(-55°C to +125°C; V_DD=3.0V to 5.5V)
MIN TYP
MAX UNITS NOTES
+3.0
+5.5
V
1
+3.0
+3.0
+5.5
V_DD
V
1,2
±0.5
±2
°C
3
-0.3
+0.8
V
1,4,5
+2.2
The lower of
+3.0
5.5
or
V
1, 6
V_DD + 0.3
4.0
mA
1
750
1000
nA
7,8
1
1.5
mA
9
5
µA
10
±0.2
°C
11
NOTES:
1) All voltages are referenced to ground.
2) The Pullup Supply Voltage specification assumes that the pullup device is ideal, and therefore the
high level of the pullup is equal to V_PU. In order to meet the V_IH spec of the DS18B20, the actual
supply rail for the strong pullup transistor must include margin for the voltage drop across the
transistor when it is turned on; thus: V_{PU_ACTUAL} = V_{PU_IDEAL} + V_TRANSISTOR.
3) See typical performance curve in Figure 17.
4) Logic-low voltages are specified at a sink current of 4mA.
5) To guarantee a presence pulse under low voltage parasite power conditions, V_ILMAX may have to be
reduced to as low as 0.5V.
6) Logic-high voltages are specified at a source current of 1mA.
7) Standby current specified up to +70°C. Standby current typically is 3µA at +125°C.
8) To minimize I_DDS, DQ should be within the following ranges: GND ≤ DQ ≤ GND + 0.3V or
V_DD – 0.3V ≤ DQ ≤ V_DD.
9) Active current refers to supply current during active temperature conversions or EEPROM writes.
10) DQ line is high (“high-Z” state).
11) Drift data is based on a 1000-hour stress test at +125°C with V_DD = 5.5V.
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