DS1216 Datasheet, PDF (10/15 Pages) Dallas Semiconductor – SmartWatch RAM DS1216B/C/D/H SmartWatch ROM DS1216E/F

CAPACITANCE
(T_A = +25°C)
PARAMETER
Input Capacitance
Output Capacitance
Expected Data Retention
SYMBOL
C_IN
C_OUT
t_DR
MIN
AC ELECTRICAL CHARACTERISTICS
(V_CC = 4.5V to 5.5V, T_A = 0°C to +70°C.)
PARAMETER
SYMBOL MIN
Read Cycle Time
CE Access Time
OE Access Time
CE to Output Low-Z
OE to Output Low-Z
CE to Output High-Z
OE to Output High-Z
t_RC
75
t_CO
t_OE
t_COE
6
t_OEE
6
t_OD
t_ODO
Address Setup Time (ROM)
t_AS
20
Address Hold Time (ROM)
t_AH
Read Recovery
t_RR
15
Write Cycle Time
t_WC
75
Write Pulse Width
t_WP
75
Write Recovery
t_WR
15
Data Setup Time
t_DS
35
Data Hold Time
CE Pulse Width
RST Pulse Width
CE Propagation Delay
CE High to Power-Fail
t_DH
0
t_CW
65
t_RST
75
t_PD
t_PF
DS1216 SmartWatch RAM/SmartWatch ROM
TYP
MAX
5
7
10
UNITS
pF
pF
years
NOTES
14
TYP
MAX
65
65
30
30
10
6
0
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
11
12
9
10
10
7
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