MXD1210 Datasheet, PDF (1/8 Pages) Maxim Integrated Products – Nonvolatile RAM Controller

19-0154; Rev 1; 3/96
Nonvolatile RAM Controller
_______________General Description
The MXD1210 nonvolatile RAM controller is a very low-
power CMOS circuit that converts standard (volatile)
CMOS RAM into nonvolatile memory. It also continually
monitors the power supply to provide RAM write protec-
tion when power to the RAM is in a marginal (out-of-
tolerance) condition. When the power supply begins to
fail, the RAM is write protected, and the device switch-
es to battery-backup mode.
Applications
µP Systems
Computers
Embedded Systems
_________________Pin Configurations
TOP VIEW
VCCO ₁
VBATT1 2
TOL 3
GND 4
MXD1210
DIP/SO
8 _VCCI
7 VBATT2
6 _CEO
5 _CE
____________________________Features
o Battery Backup
o Memory Write Protection
o 230µA Operating-Mode Quiescent Current
o 2nA Backup-Mode Quiescent Current
o Battery Freshness Seal
o Optional Redundant Battery
o Low Forward-Voltage Drop on VCC Supply Switch
o 5% or 10% Power-Fail Detection Options
o Tests Battery Condition During Power-Up
o 8-Pin SO Available
______________Ordering Information
PART
TEMP. RANGE
MXD1210CPA
0°C to +70°C
MXD1210CSA
0°C to +70°C
MXD1210CWE
0°C to +70°C
MXD1210C/D
0°C to +70°C
MXD1210EPA
-40°C to +85°C
MXD1210ESA
-40°C to +85°C
MXD1210EWE
-40°C to +85°C
MXD1210MJA
-55°C to +125°C
*Contact factory for dice specifications.
PIN-PACKAGE
8 Plastic DIP
8 SO
16 Wide SO
Dice*
8 Plastic DIP
8 SO
16 Wide SO
8 CERDIP
__________Typical Operating Circuit
N.C. 1
VCCO 2
N.C. ₃
VBATT1 ₄
N.C. 5
TOL 6
N.C. ₇
GND ₈
MXD1210
16 N.C.
15 VCCI
14 N.C.
13 VBATT2
12 N.C.
11 CEO
10 N.C.
9 CE
Wide SO
+5V ^VCCI 8
1
2
MXD1210 ⁷
CE
FROM ⁵
6
DECODER
4
3
VCCO
VBATT1
VBATT2
V_CC
CMOS
RAM
CE
GND
________________________________________________________________ Maxim Integrated Products 1
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