DS1808 Datasheet, PDF (1/1 Pages) Maxim Integrated Products – Process: 1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N+ESD,TEOS Spacer, Passivation w/Nov TEOS Oxide-Nitride

Reliability Report: DS1808
Process: ^{1P, 1M, 5.0um, 30V NF & PF, UVNd, UVPd ,N+ESD,TEOS Spacer,}
Passivation w/Nov TEOS Oxide-Nitride
Metal: ^{Al / 0.5% Cu / 0.8% Si}
Gate Ox Thickness: ^{225 Ã}
Pin Count: ¹⁶
Summary Data with Chi-Square Distribution Assumed.
Stress Ambient Temperature and Voltage to
Field Ambient Temperature And Voltage
Cf: ^60%
Ea: ^0.7
β: ⁰
Tuse: ^{25 °C}
Vuse: ^{5.5 Volts}
Assembly:
Package:
Body Size:
ATP (Amkor, PI)
SOIC
150x1.4
DESCRIPTION
VEHICLE REV DATE CODE CONDITION
READPOINT QUANTITY FAILS FILE # DEVICE HRS
HIGH TEMPERATURE OPERATING LIFE
HIGH VOLTAGE LIFE DS1808
A2
DS1808
A2
0133 125C, 6.0 V (PSA) & +13.2 V (PS 6
HOURS
80
0
0133 125C, 6.0 V (PSA) & +13.2 V (PS 336
HOURS
80
0
DEVICE HRS: 2.54E+07
TOTALS: ⁰
FAILURE RATE MTBF (yrs): 3158
FITs:
36
452720
24899612
PRODUCT
DS1808
REV
A2
DIE SIZE (x)
159
DIE SIZE (y)
80
No. of Transistors
1700
Thursday, May 16, 2002