UT230-55_15 Datasheet, PDF (1/4 Pages) Marktech Corporate – LEDs

UltraThin™ LEDs
CxxxUT230-S0002
Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC^® substrate to deliver
superior price/performance for blue and green LEDs. These vertically structured LED chips are small in size and
require a low forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications
and the ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and
thinner form factors are required.
FEATURES
APPLICATIONS
• Small Chip – 230 x 230 x 85 μm
• UT LED Performance
– 5.5 mW min. (455–475 nm) Blue
– 2.5 mW min. (500-510 nm) Traffic Green
– 2.5 mW min. (520-535 nm) Green
• Low Forward Voltage
– 2.9–3.0 V Typical at 5 mA
• Single Wire Bond Structure
• Class 2 ESD Rating
• Mobile Phone Keypads
• Audio Product Display Lighting
• Mobile Appliance Keypads
• Automotive Applications
CxxxUT230-S0002 Chip Diagram
Top View
G•SiC LED Chip
230 x 230 μm
Mesa (junction)
176 x 176 μm
Bottom View
Gold Bond Pad
105 μm Diameter
Die Cross Section
SiC Substrate
Bottom Surface
150 x 150 μm
Anode (+)
InGaN
SiC Substrate
h = 85 μm
Backside
Metallization
80 x 80 μm
Cathode (-)
Subject to change without notice.
www.cree.com