UT2200-50_15 Datasheet, PDF (1/5 Pages) Marktech Corporate – LED

Cree^® UltraThinII™ LED
Data Sheet
CxxxUT2200-Sxxxxx
Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC^® substrate to deliver
superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low
forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications. Applications
include keypad backlighting where sub-miniaturization and thinner form factors are required.
FEATURES
• Small Chip – 200 x 200 x 50 μm
• UT LED Performance
– 2.5mW min. (520-535 nm) Green
– 5.5 mW min. (455–475 nm) Blue
– 8.0 mW min. (455-475 nm) Blue
• Low Forward Voltage
– 2.9 V Typical at 5 mA
• Single Wire Bond Structure
APPLICATIONS
• Mobile Phone Keypads
• Audio Product Display Lighting
• Mobile Appliance Keypads
• Automotive Applications
CxxxUT2200-Sxxxxx Chip Diagram
Top View
G•SiC LED Chip
200 x 200 μm
Mesa (junction)
150 x 150 μm
Gold Bond Pad
90 μm Diameter
Bottom View
SiC Substrate
Bottom Surface
150 x 150 μm²
SiC Substrate
h = 50 μm
Backside
Metallization
80 x 80 μm
Die Cross Section
InGaN
Anode (+)
Cathode (-)
Subject to change without notice.
www.cree.com