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UT2200-50 Datasheet, PDF (1/5 Pages) Marktech Corporate – LED | |||
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Cree® UltraThinII⢠LED
Data Sheet
CxxxUT2200-Sxxxxx
Creeâs UltraThin LEDs combine highly efficient InGaN materials with Creeâs proprietary Gâ¢SiC® substrate to deliver
superior price/performance for blue LEDs. These vertically structured LED chips are small in size and require a low
forward voltage. Creeâs UT⢠series chips are tested for conformity to optical and electrical specifications. Applications
include keypad backlighting where sub-miniaturization and thinner form factors are required.
FEATURES
⢠Small Chip â 200 x 200 x 50 μm
⢠UT LED Performance
â 2.5mW min. (520-535 nm) Green
â 5.5 mW min. (455â475 nm) Blue
â 8.0 mW min. (455-475 nm) Blue
⢠Low Forward Voltage
â 2.9 V Typical at 5 mA
⢠Single Wire Bond Structure
APPLICATIONS
⢠Mobile Phone Keypads
⢠Audio Product Display Lighting
⢠Mobile Appliance Keypads
⢠Automotive Applications
CxxxUT2200-Sxxxxx Chip Diagram
Top View
Gâ¢SiC LED Chip
200 x 200 μm
Mesa (junction)
150 x 150 μm
Gold Bond Pad
90 μm Diameter
Bottom View
SiC Substrate
Bottom Surface
150 x 150 μm2
SiC Substrate
h = 50 μm
Backside
Metallization
80 x 80 μm
Die Cross Section
InGaN
Anode (+)
Cathode (-)
Subject to change without notice.
www.cree.com
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