OPC9400-37_15 Datasheet, PDF (1/1 Pages) Marktech Corporate – LED Chip Infrared

Radiation
Infrared
P Electrode
Emission Area
Type
GaAs
UNIT:um
GaAs HOMO Layer
N Electrode
Physical Characteristics & Structure
Material: GaAs
Bond Pad Size: 115um diameter
Junction Size: 370um x 370um
Anode Metalization: Gold Alloy
Thickness: 280um
Cathode Metalization: Gold Alloy
LED Chip Infrared
Product No: OPC9400-37
Electrodes
P (anode) up
Typ370
００
Electrical & Optical Characteristics (Ta = 25ºC)
ITEMS
SYMBOL
CONDITIONS
MIN
TYP
Forward Voltage
Reverse Voltage
Radiant Power*
Peak Wavelength
Spectral Bandwidth at 50%
Vf
Vr
Φe
λp
∆λ0.5
If=20mA
Ir=10uA
If=20mA
If=20mA
If=20mA
--
--
5
--
0.4
--
--
940
--
45
* LED chip is mounted on TO-18 gold header without resin coating.
MAX
1.4
--
--
--
--
UNIT
V
V
mW
nm
nm
Absolute Maximum Ratings (Ta = 25ºC)
Continuous Maximum Forward Current: 50mA (DC)
Reverse Voltage: 5V (IR=10uA)
Storage Temperature
while on mylar membrane: 0 to 40 ºC
after removal from mylar membrane: -30 to 100 ºC
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All
operating parameters must be validated for each customer application by the customer.
Global Headquarters, 3 Northway Lane North, Latham, NY 12110, USA www.marktechopto.com
TOLL FREE: 1-800-984-5337 • PHONE: [phone] • FAX: [phone] • EMAIL: [e-mail]
2014-04-24
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