OPC9000-32_15 Datasheet, PDF (1/1 Pages) Marktech Corporate – LED Chip Infrared

LED Chip Infrared
Product No: OPC9000-32
N Electrode
Emission Area
Radiation
Infrared
Type
AlGaAs
Unit: um
N AlGaAs Cladding Layer
GaAs Active Layer
P AlGaAs Cladding Layer
Electrodes
N(Cathode)up
Typ320
P Electrode
Physical Characteristics & Structure
Material: AlGaAs
Junction Size: 320um x 320um
Thickness: 160um
Bond Pad Size: 140um diameter
Anode Metalization: Gold Alloy
Cathode Metalization: Gold Alloy
Electrical & Optical Characteristics (Ta = 25ºC)
ITEMS
SYMBOL
CONDITIONS
MIN
TYP
Forward Voltage
Vf
Reverse Voltage
Vr
Radiated Power*
Φe
Peak Wavelength
λp
Spectral Bandwidth at 50%
∆λ
If=20mA
Ir=10uA
If=20mA
If=20mA
If=20mA
--
--
5
--
2.5
--
--
900
--
60
* LED chip is mounted on TO-18 gold header without resin coating.
MAX
1.6
--
--
--
--
UNIT
V
V
mW
nm
nm
Absolute Maximum Ratings (Ta = 25ºC)
Continuous Maximum Forward Current: 100mA (DC)
Reverse Voltage: 5V (IR=10uA)
Storage Temperature
while on mylar membrane: 0 to 40 ºC
after removal from mylar membrane: -30 to 100 ºC
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All
operating parameters must be validated for each customer application by the customer.
Global Headquarters, 3 Northway Lane North, Latham, NY 12110, USA www.marktechopto.com
TOLL FREE: 1-800-984-5337 • PHONE: [phone] • FAX: [phone] • EMAIL: [e-mail]
2014-04-24
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