OPC8700-32_15 Datasheet, PDF (1/1 Pages) Marktech Corporate – LED Chip Infrared

LED Chip Infrared
Product No: OPC8700-32
Radiation
Infrared
Type
AlGaAs
N Electrode
Emission Area
N AlGaAs Cladding Layer
GaAs Active Layer
P AlGaAs Cladding Layer
P^P E^El^le^ec^ct^tr^ro^od^de^e
Physical Characteristics & Structure
Material: AlGaAs
Bond Pad Size: 140um diameter
Junction Size: 320um x 320um
Anode Metalization: Gold Alloy
Thickness: 160um
Cathode Metalization: Gold Alloy
Electrodes
N (cathode) up
Typ320
Electrical & Optical Characteristics (Ta = 25ºC)
ITEMS
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Forward Voltage
Reverse Voltage
Vf
If=20mA
--
--
1.6
V
Vr
Ir=10uA
5
--
--
V
Radiant Power*
Φe
If=20mA
3.5
--
--
mW
Peak Wavelength
λp
If=20mA
850
870
900
nm
Spectral Bandwidth
∆λ
If=20mA
--
45
--
nm
Rise Time
Tr
Ifp=100mA Tw=125ns, Duty=25% --
20
--
ns
Fall Time
Tf
Ifp=100mA Tw=125ns, Duty=25% --
20
--
ns
Peak Forward Voltage
Vfm
Ifp=400mA Tw=100us, Duty=10% --
2.2
--
V
* LED chip is mounted on TO-18 gold header without resin coated.
Absolute Maximum Ratings (Ta = 25ºC)
Continuous Maximum Forward Current: 100mA (DC)
Reverse Voltage: 5V (IR=10uA)
Storage Temperature
while on mylar membrane: 0 to 40 ºC
after removal from mylar membrane: -30 to 100 ºC
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All
operating parameters must be validated for each customer application by the customer.
Global Headquarters, 3 Northway Lane North, Latham, NY 12110, USA www.marktechopto.com
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