OPC8700-32A_15 Datasheet, PDF (1/1 Pages) Marktech Corporate – LED Chip Infrared

LED Chip Infrared
Product No: OPC8700-32A
N Electrode
Emission Area
Radiation
Infrared
Type
AlGaAs
UNIT:um
N AlGaAs Cladding Layer
GaAs Active Layer
P AlGaAs Cladding Layer
Electrodes
N (cathode) up
Typ320
Physical Characteristics & Structure
Material: AlGaAs
Bond Pad Size: 115um diameter
Junction Size: 320um x 320um
Anode Metalization: Gold Alloy
Thickness: 150um
Cathode Metalization: Gold Alloy
P Electrode
Electrical & Optical Characteristics (Ta = 25ºC)
ITEMS
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNIT
Forward Voltage
Reverse Voltage
Vf
If=20mA
--
--
1.6
V
Vr
Ir=10uA
5
--
--
V
Radiant Power*
Φe
If=20mA
4.5
--
--
mW
Peak Wavelength
λp
If=20mA
850
870
900
nm
Spectral Bandwidth at 50%
∆λ0.5
If=20mA
--
45
--
nm
Rise Time
Tr
Ifp=500mA Tw=125ns, Duty=25% --
20
--
ns
Fall Time
Tf
Ifp=500mA Tw=125ns, Duty=25% --
20
--
ns
Peak Forward Voltage
Vfm
Ifp=400mA Tw=100us, Duty=10% --
2.4
--
V
* LED chip is mounted on TO-18 gold header without resin coated.
Absolute Maximum Ratings (Ta = 25ºC)
Continuous Maximum Forward Current: 100mA (DC)
Reverse Voltage: 5V (IR=10uA)
Storage Temperature
while on mylar membrane: 0 to 40 ºC
after removal from mylar membrane: -30 to 100 ºC
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All
operating parameters must be validated for each customer application by the customer.
Global Headquarters, 3 Northway Lane North, Latham, NY 12110, USA www.marktechopto.com
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