MTE8090M_09 Datasheet, PDF (1/1 Pages) Marktech Corporate – Infrared Emitting Diode

MTE8090M
Infrared Emitting Diode
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃)
ITEM
SYMBOL CONDITIONS
MIN TYP MAX UNIT
Power Output
PO IF=20mA
4.5
mW
Forward Voltage
VF IF=20mA
1.3
1.6 V
Reverse Current
IR VR=5V
10 μA
Peak Wavelength
λp IF=20mA
880
nm
Spectral Line Half Width
Δλ IF=20mA
60
nm
Half Intensity Beam Angle
θ IF=20mA
±80
deg.
Rise Time
Tr IFP=50mA
1.5
μS
Fall Time
Tf IFP=50mA
0.8
μS
Junction Capacitance
Cj 1MHz ,V=0V
15
pF
Temp. Coefficient of PO
P/T IF=10mA
-0.5
%/℃
Temp. Coefficient of VF
V/T IF=10mA
-1.5
mV/℃
FEATURES ï½¥High-output Power
ï½¥Compact
ï½¥High Reliability
APPLICATIONS ï½¥Optical Switches
ï½¥Optical Sensors
1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
ITEM
SYMBOL RATINGS
Forward Current (DC)
IF
50
Forward Current (Pulse)*1 IFP
0.5
Reverse Voltage
VR
5
Power Dissipation
PD
100
Operating Temp.
Topr
-20 TO 85
Storage Temp.
Tstg
-30 TO 100
Junction Temp.
Tj
100
Lead Soldering Temp.*2
Tls
260
*1:Tw=10uS,T=10mS
*2:Time 5 Sec max,Position:Up to 3mm from the body
① Cathode
② Anode
Dimensions (Unit:mm)
UNIT
mA
A
V
mW
℃
℃
℃
℃
SPECTRAL OUTPUT
120
100
80
60
40
20
0
780
880
980
WAVELENGTH(nm)
OPTRANS
To purchase this part contact
Marktech Optoelectronics at
800.984.5337
FORWARD I-V CHARACTERISTICS
60
50
40
30
20
10
0
0
1
2
3
FORWARD VOLTAGE(V)
THERMAL DERATING CURVE
60
50
40
30
20
10
0
-30
0
30
60
90
AMBIENT TEMPERATURE(℃)
RELATIVE POWER vs FORWARD
CURRENT
250
200
150
100
50
0
0 10 20 30 40 50 60
FORWARD CURRENT(mA)
POWER OUTPUT vs TEMPERATURE
IF=10mA
140
120
100
80
60
40
20
0
-30 0
30 60 90
AMBIENT TEMPERATURE(℃)
Marktech
Optoelectronics
www.marktechopto.com
RADIATION PATTERN
120
100
80
60
40
20
0
-90 -60 -30 0
30 60 90
BEAM ANGLE(deg.)
FORWARD VOLTAGE vs
TEMPERATURE
IF=10mA
3
2.5
2
1.5
1
0.5
0
-30
0
30
60
90
AMBIENT TEMPERATURE(℃)
11/24/2009 001-LSC880M3A.xls