MTE2050-OH1S Datasheet, PDF (1/1 Pages) Marktech Corporate – Infrared Emitting Diode

MTE2050-OH1S
FEATURES High-output Power
Narrow Beam Angle
High Reliability
APPLICATIONS Optical Switches
Bar-code Reader
Anode
Cathode
Dimensions (Unit:mm)
1. ABSOLUTE MAXIMUM RATINGS (Ta=25)
ITEM
SYMBOL RATINGS
UNIT
Forward Current (DC)
IF
100
mA
Forward Current (Pulse)*1 IFP
1
A
Reverse Voltage
VR
5
V
Power Dissipation
PD
180
mW
Operating Temp.
Topr
-20 TO 80
Storage Temp.
Tstg
-30 TO 100
Junction Temp.
Tj
100
Lead Soldering Temp.*2
Tls
260
*1:Tw=10uS,T=10mS
*2:Time 5 Sec max,Position:Up to 3mm from the body
OPTRANS
2-6-11 MASUKATA,TAMA-KU, KAWASAKI 214-0032.JAPAN
TEL.[phone] / FAX.[phone]
E-male [e-mail]
Infrared Emitting Diode
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25)
ITEM
SYMBOL CONDITIONS
Power Output
PO IF=50mA
Forward Voltage
VF IF=50mA
Reverse Current
IR VR=5V
Peak Wavelength
p IF=50mA
Spectral Line Half Width
IF=50mA
Half Intensity Beam Angle
IF=50mA
Rise Time
Tr IFP=50mA
Fall Time
Tf IFP=50mA
Junction Capacitance
Cj 1MHz ,V=0V
Temp. Coefficient of PO
P/T IF=10mA
Temp. Coefficient of VF
V/T IF=10mA
MIN TYP MAX UNIT
11.0
mW
1.45
1.8 V
10 A
880
nm
60
nm
±12
deg.
1.5
S
0.8
S
15
pF
-0.5
%/
-1.5
mV/
2000710/23 009-LSF880N1