MTD8060P Datasheet, PDF (1/2 Pages) Marktech Corporate – Photo Transistor

Photo Transistor
MTD8060P
Features
HIgh Reliability
Narrow Angular Response
Applications
Optical Switches
Optical Sensors
Edge Sensing
Smoke Detectors
Maximum Ratings (Ta=25^oC)
Characteristic
Symbol Max.
Collector Power
PC
Dissipation
Collector−Emitter
VCE
Voltage
Emitter−Collector
VEC
Voltage
Collector Current
IC
Operating Temperature Topr
Storage Temperature
Tstg
Junction Temperature
Tj
Soldering Temperature Tsol
250
30
5
50
−
−30 ~
+100
125
260
Test
Unit
Condition
−
mW
−
V
−
V
−
mA
−
o_C
−
o_C
−
o_C
for 5 sec. max ^oC
Opto−Electrical Characteristics (Ta=25^oC)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
C−E Saturation Voltage
VCE(sat)
Ic=0.2mA,Ee=5mW/cm2*
−
.20
−
µA
Light Current
IL
Vce=20V, Ee=0.5mW/cm2*
−
3.00
−
µA
Dark Current
ID
Vce=20V, Ee=0mW/cm2*
−
−
100
nA
Spectral Sensitivity
λ
−
−
400~1100
−
µA
Peak Sensitivity Wavelength
λp
Beam Angle
θ
−
−
880
−
V
−
−
± 12^o
−
deg.
Rise Time
Tr
RL=100,Vce=5V,Ic=0.5mA
−
10.00
−
ns
Fall Time
Tf
RL=100,Vce=5V,Ic=0.5mA
−
10.00
−
ns
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3 Northway Lane North
Latham, New York 12110
Toll Free: 800.984.5337
Fax: [phone]
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950 South Coast Drive, Suite 265
Costa Mesa, California 92626
Toll Free: 800.984.5337
Fax: [phone]