MTD8000N Datasheet, PDF (1/2 Pages) Marktech Corporate – Metal Can Photo Transistor

Metal Can Photo Transistor
MTD8000N
Features
High Reliability in Demanding Environments
Applications
Optical Sensors
Optical Switches
Edge Sensing
Smoke Detectors
Maximum Ratings (Ta=25^oC)
Characteristic
Symbol Max.
Test
Unit
Condition
Collector Power
Dissipation
PC
250
−
mW
Collector−Emitter
Voltage
VCE
30
−
V
Emitter−Collector
Voltage
VEC
5
−
V
Collector Current
Operating Temperature
Storage Temperature
Junction Temperature
Soldering Temperature
IC
50
−
mA
Topr −30~+100
−
o_C
Tstg −40~+125
−
o_C
Tj
125
−
o_C
Tsol
260 for 5 sec. max ^oC
Opto−Electrical Characteristics (Ta=25^oC)
Characteristic
Symbol
Test Condition
Min
C−E Saturation Voltage
VCE(sat)
Ic=0.2mA Ee=5mW/cm²
−
Light Current
IL
Vce=20V, Ee=0.5mW/cm²
−
Dark Current
ID
Vce=20V, Ee = 0mW/cm²
−
Spectral Sensitivity
λ
−
−
Peak Sensitivity Wavelength
λp
−
−
Beam Angle
θ
−
−
Rise Time
Tr
RL=100Ω ,Vce=5V,Ic=0.5mA
−
Fall Time
Tf
RL=100Ω ,Vce=5V,Ic=0.5mA
−
* Color Temperature = 2870ºK Standard Tungsten Lamp
Typ
.20
3.00
−
400~1100
880
± 12^o
10000.00
10000.00
Max
−
−
100
−
−
−
−
−
Unit
µA
µA
nA
µA
V
deg.
ns
ns
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3 Northway Lane North
Latham, New York 12110
Toll Free: 800.984.5337
Fax: [phone]
Web: www.marktechopto.com | Email: [e-mail]
West Coast Sales Office
950 South Coast Drive, Suite 265
Costa Mesa, California 92626
Toll Free: 800.984.5337
Fax: [phone]