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MTD6000PT Datasheet, PDF (1/2 Pages) Marktech Corporate – Photo Transistor
Photo Transistor
MTD6000PT
Applications -
• Edge Sensing
• Fiber Optics
• Smoke Detectors
• Optical Switch
Features -
• High Reliability in Demanding Environments (Metal
Can Package)
• Optical Grade Glass Lens
• Narrow Angular Response
• Compact Package
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL RATING
UNIT
Collector - Emitter Voltage
Collector - Base Voltage
Collector Current
Vceo
30
V
Veco
5
V
Ic
20
mA
1. Anode
Unit: mm
2. Cathode
Collector Power Dissipation
Pc
100
mW
Operating Temperature
Topr
-25~100
°C
Storage Temperature
Tstg
-30~125
°C
Junction Temperature
Tj
125
ºC
OPTO-ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Light Current
Dark Current
C-E Saturation Voltage
IL
ID
VCE(sat)
Vce = 20V L = 100 Lux*
Vce = 20V
Ic = 0.2 mA L = 1000Lux*
Spectral Sensitivity
λ
—
Spectral Sensitivity
λ
Using Filter
Peak Sensitivity Wavelength
λP
Rise Time
Tr
Fall Time
Tf
Half Intensity Beam Angle
θ
—
R = 100Ω, Vcc = 5V, Ic = 1mA
R = 100Ω, Vcc = 5V, Ic = 1mA
—
* Color Temperature = 2870º K Standard Tungsten Lump
MIN.
—
—
—
—
—
—
—
—
—
TYP.
0.7
—
0.2
400~1100
800~1100
880
10
10
±10
MAX.
—
100
—
—
—
—
—
—
—
UNIT
mA
nA
V
nm
nm
nm
µs
µs
º
marktech
optoelectronics
120 Broadway • Menands, New York 12204
Toll Free: (800) 98-4LEDS • Fax: (518) 432-7454
For up-to-date product info visit our web site at www.marktechopto.com
532
All specifications subject to change.