MTD5010M Datasheet, PDF (1/2 Pages) Marktech Corporate – Ultra High Speed Photo Diode

Ultra High Speed Photo Diode
MTD5010M
Applications -
• Optical Switches • Edge Sensing
• Smoke Detectors • Fiber Optical Communications
Features -
• Ultra High Speed
• Low Dark current
• Wide Angular Response
• High Reliability in Demanding Environments
(Metal Can Package)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Reverse Voltage
Power Dissapation
Operating Temperature
Storage Temperature
High Frequency Response
SYMBOL RATING
V_R
30
P_D
100
T_opr
-30~100
T_stg
-40~125
fc
up to 100
UNIT
V
mW
°C
°C
MHz
1. Anode
UNIT: mm
2. Cathode
OPTO-ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Open Circuit Voltage
Voc
L = 1000Lux*
Light Current
IL
VR = 10V L = 1000Lux*
Dark Current
ID
VR = 10V
Spectral Sensitivity
λ
—
Peak Sensitivity Wavelength
λp
—
Responsivity
Rt
VR = OV, λ = 450nm
Rt
VR = OV, λ = 900nm
Angular Response
θ
—
Junction Capacitance
Cj
1 MHz V=OV
* Color Temperature = 2870º K Standard Tungsten Lamp
MIN. TYP. MAX.
—
0.35
—
—
30
—
—
—
5
400~1000
—
850
—
—
.15
—
—
.55
—
—
±55
—
—
15
—
UNIT
V
µA
nA
nm
nm
A/W
A/W
deg
pF
marktech
optoelectronics
120 Broadway • Menands, New York 12204
Toll Free: (800) 98-4LEDS • Fax: [phone]
For up-to-date product info visit our web site at www.marktechopto.com
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All specifications subject to change.