LSF876C1 Datasheet, PDF (1/1 Pages) Marktech Corporate – Infrared Emitting Diode

LSF876C1
Infrared Emitting Diode
FEATURES
APPLICATIONS
ï½¥High-output Power
ï½¥Compact
ï½¥High Reliability
ï½¥Optical Switches
ï½¥Optical Sensors
1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
ITEM
SYMBOL
RATINGS
Forward Current (DC)
IF
100
Forward Current (Pulse)*1
IFP
1
Reverse Voltage
VR
5
Power Dissipation
Operating Temp.
PD
100
Topr
-20 TO 80
Storage Temp.
Tstg
-30 TO 100
Junction Temp.
Tj
100
Lead Soldering Temp.*2
Tls
260
*1:Tw=10uS,T=10mS
*2:Time 5 Sec max,Position:Up to 3mm from the body
OPTRANS
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25 ℃)
ITEM
SYMBOL CONDITIONS
Power Output
PO IF=50mA
Forward Voltage
Reverse Current
VF IF=50mA
IR VR=5V
Peak Wavelength
λp IF=50mA
Spectral Line Half Width
Δλ IF=50mA
Half Intensity Beam Angle
θ IF=50mA
MIN
TYP
MAX UNIT
8.0
18.0
mW
1.5
1.8 V
10 μA
870
nm
45
nm
±20
deg.
① Anode
② Cathode
Dimensions (Unit:mm)
UNIT
mA
A
V
mW
℃
℃
℃
℃
SPECTRAL OUTPUT
120
100
80
60
40
20
0
770
870
970
WAVELENGTH(nm)
To purchase this part contact
Marktech Optoelectronics at
800.984.5337
120
100
80
60
40
20
0
0
FORWARD I-V CHARACTERISTICS
1
2
3
FORWARD VOLTAGE(V)
RADIATION PATTERN
120
100
80
60
40
20
0
-90 -60 -30
0
30
60
90
BEAM ANGLE(deg.)
Marktech
Optoelectronics
www.marktechopto.com
RELATIVE POWER vs FORWARD CURRENT
250
200
150
100
50
0
0
25
50
75
100
125
FORWARD CURRENT(mA)
THERMAL DERATING CURVE
80
27
60
40
20
0
-30
0
30
60
90
AMBIENT TEMPERATURE( )
11/6/2009 LSF876C1.xls