LSF872C1S Datasheet, PDF (1/1 Pages) Marktech Corporate – Infrared Emitting Diode

LSF872C1S
Infrared Emitting Diode
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25)
ITEM
SYMBOL CONDITIONS
Power Output
PO IF=50mA
Forward Voltage
VF IF=50mA
Reverse Current
IR VR=5V
Peak Wavelength
p IF=50mA
Spectral Line Half Width
IF=50mA
Half Intensity Beam Angle
IF=50mA
Junction Capacitance
Cj 1MHz ,V=0V
Temp. Coefficient of PO
P/T IF=10mA
Temp. Coefficient of VF
V/T IF=10mA
MIN
14.0
TYP
17.0
1.55
870
45
±25
50
-0.3
-2.1
MAX UNIT
20.0 mW
2.0 V
10 A
nm
nm
deg.
pF
%/
mV/
FEATURES
APPLICATIONS
High-output Power
Compact
High Reliability
Optical Switches
Optical Sensors
Anode
Cathode
Dimensions (Unit:mm)
1. ABSOLUTE MAXIMUM RATINGS (Ta=25)
ITEM
SYMBOL RATINGS UNIT
Forward Current (DC)
IF
60
mA
Forward Current (Pulse)*1 IFP
0.5
A
Reverse Voltage
VR
5
V
Power Dissipation
PD
100
mW
Operating Temp.
Topr
-20 TO 85
Storage Temp.
Tstg
-30 TO 100
Junction Temp.
Tj
100
Lead Soldering Temp.*2
Tls
260
*1:Tw=10uS,T=10mS
*2:Time 5 Sec max,Position:Up to 3mm from the body
To purchase this part contact
Marktech Optoelectronics at
800.984.5337
Marktech
Optoelectronics
www.marktechopto.com