LSF850C1 Datasheet, PDF (1/1 Pages) Marktech Corporate – Infrared Emitting Diode

LSF850C1
FEATURES ï½¥High-output Power
ï½¥Compact
ï½¥High Reliability
APPLICATIONS ï½¥Optical Switches
ï½¥Optical Sensors
① Anode
② Cathode
Dimensions (Unit:mm)
1. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
ITEM
SYMBOL RATINGS UNIT
Forward Current (DC)
IF
60
mA
Forward Current (Pulse)*1 IFP
0.5
A
Reverse Voltage
VR
5
V
Power Dissipation
PD
100
mW
Operating Temp.
Topr
-20 TO 85
℃
Storage Temp.
Tstg
-30 TO 100
℃
Junction Temp.
Tj
100
℃
Lead Soldering Temp.*2
Tls
260
℃
*1:Tw=10uS,T=10mS
*2:Time 5 Sec max,Position:Up to 3mm from the body
SPECTRAL OUTPUT
120
100
80
60
40
20
0
750
850
950
WAVELENGTH(nm)
Infrared Emitting Diode
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25℃)
ITEM
SYMBOL CONDITIONS MIN
Power Output
PO IF=20mA
Forward Voltage
VF IF=20mA
Reverse Current
IR VR=5V
Peak Wavelength
λp IF=20mA
Spectral Line Half Width
Δλ IF=20mA
Half Intensity Beam Angle
θ IF=20mA
TYP MAX UNIT
8.0
mW
1.4 1.9 V
100 μA
850
nm
30
nm
±25
deg.
60
50
40
30
20
10
0
0
FORWARD I-V CHARACTERISTICS
1
2
3
FORWARD VOLTAGE(V)
RADIATION PATTERN
120
100
80
60
40
20
0
-90 -60 -30 0
30 60 90
BEAM ANGLE(deg.)
RELATIVE POWER vs FORWARD CURRENT
250
200
150
100
50
0
0 10 20 30 40 50 60
FORWARD CURRENT(mA)
80
70
60
50
40
30
20
10
0
-30
THERMAL DERATING CURVE
0
30
60
90
AMBIENT TEMPERATURE(℃)
OPTRANS
To purchase this part contact
Marktech Optoelectronics at
800.984.5337
Marktech
Optoelectronics
www.marktechopto.com
2008/6/9