LS880PT Datasheet, PDF (1/1 Pages) Marktech Corporate – Infrared Emitting Diode

LS880PT
Infrared Emitting Diode
2.ELECTRICAL & OPTICAL CHARACTERISTICS (Ta=25 )
ITEM
SYMBOL CONDITIONS MIN
Power Output
PO IF=50mA
Forward Voltage
VF IF=50mA
Reverse Current
IR VR=5V
Peak Wavelength
p IF=50mA
Spectral Line Half Width
IF=50mA
Half Intensity Beam Angle
IF=50mA
Rise Time
Tr IFP=50mA
Fall Time
Tf IFP=50mA
Junction Capacitance
Cj 1MHz ,V=0V
Temp. Coefficient of PO
P/T IF=10mA
Temp. Coefficient of VF
V/T IF=10mA
TYP
2.5
1.45
880
60
±4
1.5
0.8
15
-0.5
-1.5
MAX
1.8
10
UNIT
mW
V
A
nm
nm
deg.
S
S
pF
%/
mV/
FEATURES
APPLICATIONS
High-output Power
Narrow Beam Angle (Excellent)
Compact ( 2mm)
High Reliability in Demanding Environments
Optical Switches
Edge Sensing (Coin Dispenser)
Cathode
Anode
Dimensions (Unit:mm)
1. ABSOLUTE MAXIMUM RATINGS (Ta=25 )
ITEM
SYMBOL RATINGS
Forward Current (DC)
IF
75
Forward Current (Pulse)*1 IFP
0.5
Reverse Voltage
VR
5
Power Dissipation
PD
120
Operating Temp.
Topr
-20 TO 85
Storage Temp.
Tstg
-30 TO 100
Junction Temp.
Tj
100
Lead Soldering Temp.*2
Tls
260
*1:Tw=10uS,T=10mS
*2:Time 5 Sec max,Position:Up to 3mm from the body
OPTRANS
UNIT
mA
A
V
mW
To purchase this part contact
Marktech Optoelectronics at
800.984.5337
Marktech
Optoelectronics
www.marktechopto.com
2005/6/27 LS880PT