EZ600 Datasheet, PDF (1/5 Pages) Marktech Corporate – Gen II LED

Cree^® EZ600™ Gen II LED
Data Sheet
CxxxEZ600-Sxx000-2
Cree’s EZBright™ LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN
materials with Cree’s proprietary optical design and device technology to deliver superior value for high-intensity LEDs.
The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these
LEDs are die attachable with conductive epoxy, solder paste or solder preforms, as well as the eutectic method. These
vertically structured, low forward voltage LED chips are approximately 170 microns in height. Cree’s EZ™ chips are
tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications,
such as general illumination, automotive lighting and LCD backlighting.
FEATURES
• EZBright Power Chip LED RF Performance
– 450 & 460 nm - 200 mW min.
– 527 nm - 60 mW min.
• Lambertian Radiation
• Conductive Epoxy, Solder Paste or Preforms, or
Flux Eutectic Attach
• Low Forward Voltage – 3.5 V Typical at 350 mA
• Single Wire Bond Structure
• Maximum DC Forward Current - 400 mA
• Dielectric Passivation Across Epi Surface
APPLICATIONS
• General Illumination
– Automobile
– Aircraft
– Decorative Lighting
– Task Lighting
– Outdoor Illumination
• White LEDs
• Crosswalk Signals
• Backlighting
CxxxEZ600-Sxx000-2 Chip Diagram
Top View
EZBright LED Chip
580 x 580 μm²
Backside
Metallization
Gold Bond Pad
130 x 130 μm²
Dielectric Passivation
Bottom View
t = 170 μm
Subject to change without notice.
www.cree.com
Die Cross Section
Cathode (-)
Anode (+);
3 μm AuSn
1