US1A Datasheet, PDF (1/1 Pages) Pan Jit International Inc. – SURFACE MOUNT ULTRAFAST RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 1.0 Ampere)

MAKO SEMICONDUCTOR CO.,LIMITED
US1A THRU US1M
SURFACE MOUNT ULTRA
FAST SWITCHING RECTIFIER
VOLTAGE: 50 TO 1000V CURRENT: 1.0A
TECHNICAL
SPECIFICATION
FEATURES
• Ideal for surface mount pick and
place application
SMA/DO-214AC
B
• Low profile package
• Built-in strain relief
A
C
• High surge capability
• Glass passivated chip
D
• Ultra fast recovery for high efficiency
• High temperature soldering guaranteed:
260^oC/10sec/at terminal
F
G
H
MECHANICAL DATA
• Terminal: Plated leads solderable per
A
B
C
D
MIL-STD 202E, method 208C
MAX. .110(2.79) .177(4.50) .058(1.47) .012(0.305)
MIN. .100(2.54) .157(3.99) .052(1.32) .006(0.152)
• Case: Molded with UL-94 Class V-O
E
F
G
H
recognized flame retardant epoxy
MAX. .208(5.28) .090(2.29) .008(0.203) .060(1.52)
MIN. .194(4.93) .078(1.98) .004(0.102) .030(0.76)
• Polarity: Color band denotes cathode
Dimensions in inches and (illimeters)
KI ^{MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS}
(Single-phase, half-wave, 60Hz, resistive or inductive load rating at 25^oC, unless otherwise stated, for capacitive load,
derate current by 20%)
RATINGS
SYMBOL
US
1A
US
1B
US
1D
US
1G
US
1J
US
1K
US
1M
UNITS
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
(T_L=100^oC)
Peak Forward Surge Current (8.3ms single
half sine-wave superimposed on rated load)
Maximum Instantaneous Forward Voltage
(at rated forward current)
Maximum DC Reverse Current
(at rated DC blocking voltage)
Maximum Reverse Recovery Time
T_a=25^oC
T_a=100^oC
(Note 1)
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
V_F
I_R
trr
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
1.0
A
30
A
1.0
1.4
1.7
V
5.0
µA
200
µA
50
75
nS
Typical Junction Capacitance
(Note 2) C_J
20
10
Typical Thermal Resistance
(Note 3) R_θ(ja)
32
Storage and Operation Junction Temperature T_STG,T_J
-50 to +150
Note:
1.Reverse recovery condition I_F=0.5A, I_R=1.0A,Irr=0.25A.
2.Measured at 1.0 MHz and applied voltage of 4.0V_dc
3.Thermal resistance from junction to terminal mounted on 5×5mm copper pad area
pF
o_C/W
o_C