SD103AW Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SURFACE MOUNT SCHOTTKY BARRIER DIODES

SCHOTTKY BARRIER DIODE
FEATURES
Low Forward Voltage Drop.
Guard Ring Construction For Transient
Negligible Reverse Recovery Time.
Low Reverse Capacitance.
Protection.
MARKING:
SD103AW :S4 SD103BW:S5 SD103CW:S6
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter
Symbol
Non-Repetitive Peak reverse voltage
Peak Repetitive Peak reverse voltage
VRM
VRRM
Working Peak Reverse Voltage
VRWM
DC Blocking
VR
Forward Continuous Current
IF
Repetitive Peak Forward Current @t≤1.0s
IFRM
Power Dissipation
Pd
Thermal Resistance Junction to Ambient
R_θjA
Storage temperature
Tstg
SD103AW
40
28
SD103AW/BW/CW
+
-
SOD-123
SD103BW
30
21
350
1.5
400
300
-65-125
SD103CW
20
14
Unit
V
V
V
V
mA
A
mW
/W
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Reverse Breakdown Voltage SD103AW
V(_BR)R
40
SD103BW
V(_BR)R
30
SD103CW
V(_BR)R
20
Forward voltage
V_F
Reverse current
SD103AW
I_RM
SD103BW
I_RM
SD103CW
I_RM
Capacitance between terminals
C_T
50
Reverse Recovery Time
t_rr
10
Max.
0.37
0.60
5.0
5.0
5.0
Unit
V
V
V
V
V
μA
μA
μA
pF
ns
Conditions
IR=10μA
IR =10μA
IR =10μA
IF=20mA
IF=200mA
VR=30V
VR=20V
VR=10V
VR=0,f=1MHz
IR=IF=200mA
Irr=0.1*IR,RL=100Ω
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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