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| S8050 Datasheet, PDF (1/2 Pages) Wing Shing Computer Components – TRANSISTOR (PNP) | |||
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MAKO SEMICONDUCTOR CO.,LIMITED
SOT-23 Plastic-Encapsulate Transistors
S8050 TRANSI STOR (NPN)
SOT-23
FEATURES
z Complimentary to S8550
z Collector Current: IC=0.5A
1. BASE
2. EMITTER
3. COLLECTOR
MARKING: J3Y/D9D/
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current -Continuous
PC
Collector Dissipation
Tj
Junction Temperature
Tstg
Storage Temperature
Value
40
25
5
0.5
0.3
150
-55-150
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Symbol
V(BR)CBO
KI Test conditions
IC= 100μA, IE=0
Min
Typ
40
Collector-emitter breakdown voltage
V(BR)CEO = IC=1mA, IB 0
25
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
Collector cut-off current
ICBO
V= CB=40 V , IE 0
Collector cut-off current
ICEO
= VCB= 20V , I E 0
Emitter cut-off current
IEBO
= VEB= 5V , IC 0
DC current gain
HFE(1)
VCE= 1V, I C= 50mA
120
HFE(2)
VCE= 1V, I C= 500mA
50
Collector-emitter saturation voltage
VCE(sat)
I=500 mA, IB= 50mA
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
Range
VBE(sat)
fT
IC=500 mA, IB= 50mA
VCE= 6V, I C= 20mA
f=30MHz
L
120-200
150
H
200-350
Unit
V
V
V
A
W
â
â
Max
0.1
0.1
0.1
350
Unit
V
V
V
μA
μA
μA
0.6
V
1.2
V
MHz
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