RB751S-40 Datasheet, PDF (1/2 Pages) Rohm – Schottky barrier diode

Plastic-Encapsulate Diodes
HIGH SPEED SWITCHING DIODE
FEATURES
Small surface mounting type
Low reverse current and low forward voltage
High reliability
MARKING: 5
RB751S-40
+
-
SOD-523
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25
Parameter
Symbol
Limits
Unit
Peak reverse voltage
VRM
40
V
DC reverse voltage
VR
30
V
Mean rectifying current
IO
30
mA
Peak forward surge current
IFSM
200
mA
Junction temperature
Tj
125
℃
Storage temperature
Tstg
-40-125
℃
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VF
0.37
V
Reverse current
IR
Capacitance between terminals
cT
0.5 μA
2
pf
Conditions
IF=1mA
VR=30V
VR=1V,f=1MHZ
MAKO Semiconductor Co., Limited 4008-378-873 http://www.makosemi.hk/
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